By Vmicro
XLprobes Lprobes: AFM Probes based on in-plane silicon technology
Features - New MEMS technology unlocking probe engineering - Long tip with profiled shape - small cone angle - TrueTipView: Precise tip visibility thus accurate landing on sample - Vertical sidewalls probe chip for easy handling Applications - Topography imaging in oscillating modes - Tapping mode - Non-contact mode - True non-contact TM - Roughness measurements - Nanoscale imaging on highly corrugated samples - Challenging aspect ratios Specifications Specifications Tilted tip design: Compensates for the AFM head mounting angle, ensuring accurate data on diverse sample surfaces. Tip height 30 µm: Enables imaging of deeper or difficult-to-access sample regions. Half-cone angle <10°: Minimizes tip-sample convolution, ensuring more accurate morphological measurements. Guaranteed tip radius <10 nm: Provides reliable resolution for advanced AFM applications.
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LF0P8Au-Si15 | Lprobe fast AFM probe | Vmicro Features - New MEMS technology - Highly profiled tip with angle engineering - Tip visibility provides accurate landing - Vertical sidewall chip for safe handling Applications - Imaging of cells, bacteria, and tissues in liquid or air - Fast peakForce Tapping TM mode - Fast Wavemode TM mode - High-resolution imaging of polymers and composite materials Specifications - Frequency: 400.0 kHz (nominal), 200-600 range - Spring constant: 0.8 N/m (nominal), 0.2-3 range - Tip height H t: 15.0 µm (nominal), 05-60 range - Tip apex radius: 7.0 nm (nominal), 2-10 range - Tip side angle θ: 22.0 ° (nominal), +/-0.5° - Tip-cantilever angle α: 112.0 ° (nominal), +/-0.5° - Cantilever length L c: 40.0 µm (nominal), +/-1 - Cantilever width W c: 10.0 µm (nominal), +/-1 - Cantilever thickness T c: 0.65 µm (nominal), +/-0.15 - Cantilever backside coating: Au - Tip-side coating: Uncoated - Tip and cantilever material: p-doped Silicon 0.01-0.02 ohm-cm - Chip dimensions: 3.4x1.6x0.4 mm Cantilever & tip details
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NF003A2-A230 | Lprobe nano-FTIR AFM probe | Vmicro Features - PDMS-free and contamination-controlled - New MEMS technology - Long tip increases spectral range - Highly profiled tip with angle engineering - Precise tip visibility enables accurate landing on sample - Vertical sidewall chip for safe handling Applications - Enhanced s-SNOM spectroscopy in the mid-infrared region - s-SNOM imaging in the mid-infrared region - Soft probe, optimal for combined s-SNOM and KPFM imaging Specifications Frequency: 90.0 kHz nominal, range 50-150 Spring constant: 3.0 N/m nominal, range 1-8 Tip height H t: 30.0 µm nominal, range 15-50 Tip apex radius: 70.0 nm nominal, range 55-90 Tip side angle θ: 15.0° nominal, +/-0.5° Tip-cantilever angle α: 118.0° nominal, +/-0.5° Cantilever length L c: 115.0 µm nominal, +/-1 Cantilever width W c: 40.0 µm nominal, +/-1 Cantilever thickness T c: 1.4 µm nominal, +/-0.15 Cantilever backside coating: A2 Tip-side coating: A2 Tip and cantilever material: p-doped Silicon 0.01-0.02 ohm-cm Chip dimensions: 3.4x1.6x0.4 mm
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Features - 10° TiltCompensated platform cantilever - 20x20µm Flat end parallel to the sample Applications - Single-cell mechanics - Cell attachment - Microsphere gluing - Uniform, angle-compensated contact for pressure-controlled measurements - Cell attachment Specifications Parameter | Unit | Nominal | Range Frequency | kHz | 19.0 | 10-50 Spring constant | N/m | 0.2 | 0.1-0.7 Tip height H t | µm | 5.0 | nan Tip apex radius | nm | — | +/-5% Tip side angle θ | ° | 180.0 | +/-0.5° Tip-cantilever angle α | ° | 101.0 | +/-0.5° Cantilever length L c | µm | 400.0 | +/-1 Cantilever width W c | µm | 20.0 | +/-1 Cantilever thickness T c | µm | 2.5 | +/-0.15 Cantilever backside coating | Uncoated Tip-side coating | Uncoated Tip and cantilever material | p-doped Silicon 0.01-0.02 ohm-cm Chip dimensions | mm | 3.4x1.6x0.4 Cantilever & tip details
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