Magnetron sputtering is a versatile deposition technique used to create thin films on a substrate surface by sputtering atoms or molecules from a target material. It offers a good deposition rate and the ability to deposit a wide range of materials including metals, dielectrics, and semiconductors. In this process, an Argon plasma is ignited above a negatively biased and magnetized target material, drawing ions from the plasma towards the target material. As a result, Argon ions impact the target, causing atoms or molecules to be ejected from the surface through a process known as sputtering. The sputtered material forms a vapour that condenses on the substrate surface, resulting in the formation of a thin film. Magnetron Sputtering: a robust solution enabling the widest range of deposited materials Magnetron sputtering can be used to deposit to create optical antireflective coatings, anti-corrosive coatings, IR optics, dental protheses, and super-insulation. This deposition method is also employed in microelectronics for producing metal film capacitors, optical data storage, and microprocessors, as well as in the consumer industry for manufacturing anti-reflective coatings. KEY FEATURES - Single, vertical coplanar, confocal or linear configuration sources can be combined for DC, DC pulsed, RF, HIPIMS - Co-sputtering configuration - Reactive gases (O2, N2, etc) can be added for direct reaction during deposition process - Integrated quartz crystal controller for thickness monitoring - Optional automatic or manual load lock (optional pre-heating and/or plasma treatments) - Optional wide range optical thickness monitor for the control of layer thickness for a large number of layers by T% or R% monitoring on the coated substrates - Software interface for real time deposition monitoring APPLICATIONS - Consumer Electronics - Automotive Industry - Solar Energy - Aerospace and Defence - Healthcare and Medical devices - Optics and Photonics - Surface engineering TECHNICAL DATA Base pressure HV < 1x10-6 mbar Base pressure UHV < 1x10-9 mbar Pumping system Turbomolecular, Cryo, TSP Sources Mounted in Single, coplanar, confocal or vertical configuration (single or multiple) DC, DC pulsed, RF, HIPIMS Additional sources Evaporation, Electron Beam, Ion Beam for Etching and Deposition Deposition area Up to 20” Substrate handling Rotation: up to 50 rpm, optional planetary configuration; Tilt: ±45°; Offset (Z or X): up to 100 mm Process temperature Up to 800 °C Reactive process One or more reactive gases (O2, H2, N2, etc.) Thickness uniformity Up to 2% Process control Programmable quartz crystal thickness controller and/or in situ optical monitor Substrate load Manual in main Chamber or by Load Lock with manual or automatic manipulator Load lock Single or Multiple Load Locks, can be motorized with multiple substrate holder Multi wafer loading Optional multi wafer charge system up to 25 wafers Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials
We design and manufacture complete deposition thin film processing equipment solutions for R&D or pilot production applications. Based on most advanced technologies, our products include a complete array of turnkey systems using chemical or physical deposition, sputtering or etchnig processes
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In order to satisfy the need to obtain products through deposition with different technologies, we are able to design and build multi-process machines able to operate automatically both in sequential and single mode
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We pay special attention to specific customer needs, offering complete tailor made systems designed to achieve the performance required by the customer and provided with a process guarantee
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Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD Applications PECVD is used to produce high-quality semiconductor and dielectric films required for various applications, like low and high-power semiconductor devices, photovoltaic solar cells' active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more. - Consumer Electronics - Automotive Industry - Solar energy - Aerospace and Defence - Healthcare and medical devices - Optics and Photonics - Wear resistant coatings Key features - RF showerhead electrode for uniform electric field and gas distribution - Modular process gas manifold with mass flow controllers for up to 12 gases - Optional vapor source controller for liquid Precursor (i.e. TEOS) with tank/cylinder in a closed cabinet for safe refill - Automatic process pressure control - Alternatively Hot Wire CVD - In situ spectroscopic plasma monitoring - Optional automatic or manual load lock (optional pre-heating and/ or plasma treatments) - Optional wide range optical thickness monitor for the control of layer thickness - Optional in situ spectroscopic ellipsometry for thickness measurement Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics Plasma Enhanced CVD - the right choice for obtaining large area compound materials mixing gaseous and/or liquid precursors at any temperature
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