By Graphensic
Monolayer graphene 7mm*7mm € 800.00 SKU: 1006 Category: Materials
€1,500.00 Download Datasheet Monolayer graphene 15mm15mm quantity SKU: 1017 Category: Materials
CATEGORY
Graphene is a crystal plane built up of carbon (C) atoms with sp2 bonding in a honeycomb lattice in which carbon participates with three in-plane bonds while the forth one is unsaturated bond in the perpendicular direction. This crystal structure is responsible for the unique properties of graphene. Graphene on SiC has attracted much interest owing to its potential as a viable candidate for electronic applications and sensors. Since it is epitaxially grown it possesses high quality crystal structure without grain boundaries while can be grown on an area as large as the SiC wafer (150 mm available on the SiC market presently). On axis SiC wafers have two inequivalent faces: Si terminated and C terminated one. The general process conditions of thermal decomposition can be applied to both faces but the growth mechanism is proven to be epitaxial only on the Si face. The graphene growth takes place at a temperature of 2000 o C and argon atmosphere. Graphene area can be from 5×5 mm 2 and up to a 4 inch wafer. Graphensic can provide graphene on all three SiC polytypes: 4H, 6H and 3C.
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Quantum Hall effect chip (3.5mm3.5mm) with up to 9 Hall bars, for metrology and research purposes, operating at 4K, 5T. Chip can be bonded to suitable socket, tested, verified, and shipped with warranty if requested. SKU: 2020
CATEGORY
Due to the increasing demand for large area electronic-grade graphene, the inventors of “high temperature graphene process” for graphene growth started up the company Graphensic AB as a spin off from LiU in 2011. The co-founders, Professor Rositsa Yakimova and collegues, have the mission to progress the company to become a leading supplier of wafer scale graphene not only in Europe but worldwide. The area of the graphene on SiC can be as large as that of the substrate. SiC wafers six inches in size are available on the market today and eight-inch wafers are under development. Most importantly, graphene continuity is not broken up by grain boundaries or other extended defects. Specific features of this type of graphene are the step edges which are intrinsically formed due to step bunching in SiC hexagonal polytypes (6H and 4H).
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