Thermal evaporation is a physical deposition technique used to create thin films on a substrate surface by evaporating a solid material. This versatile method allows for the deposition of a wide range of materials, like aluminium, gold, silver, nickel, chrome, etc. The material is located in a crucible, in a chamber kept in a high vacuum environment, and is subject to heating, until the temperature reaches the material evaporation point, when it starts to evaporate. The resulting vaporized molecules travel to the substrate surface, where they nucleate and form the thin film. It is possible to deposit organic materials too using this technique, but it requires precise temperature control, often achieved through the use of a source similar to an effusion cell. Thermal Evaporation: a reliable and affordable technology for a wide range of deposited materials Thermal evaporation is a popular technique for producing electric contacts and metal layers in the semiconductor industry, as well as for R&D purposes in microelectronics. Moreover, organic thermal evaporation can be used for manufacturing optical antireflective coatings for glasses and lenses, as well as for organic electronics, OLEDs, and other applications. KEY FEATURES - HV or UHV configuration - Single or multiple coils, boats, crucibles, or Knudsen effusion Cells - Reactive gases (O2, N2, etc) can be added for direct reaction during deposition process - Fully integrated quartz crystal controller for the automatic control of the thickness as well as for programming multilayers and deposition rate in each layer, directly from main software - Optional automatic or manual load lock with optional pre-heating and / or plasma treatments - Optional wide range optical thickness monitor for the control of layer thickness. APPLICATIONS - Microelectronics - Automotive Industry - Aerospace and defence - Healthcare and medical devices - Optics and photonics - Energy storage - Wearable technology TECHNICAL DATA Base pressure HV < 1x10-6 mbar Base pressure UHV < 1x10-9 mbar Pumping system Turbomolecular, Cryo, TSP Sources Single or multiple coils, boats or crucibles Additional sources Electron Beam, Ion Beam for Etching/Deposition, Magnetron sputtering cathodes Deposition area up to 20” Substrate handling Rotation: up to 50 rpm, optional planetary configuration; Tilt: ±45°; Offset (Z or X): up to 100 mm Process temperature Up to 800 °C Reactive process One or more reactive gases (O2, H2, N2, etc.) Thickness uniformity Up to 3% Process control Programmable quartz crystal thickness controller and/or in situ optical monitor Substrate load Manual in main Chamber or by Load Lock with manual or automatic manipulator Load lock Single or Multiple Load Locks, can be motorized with multiple substrate holder Multi wafer loading Optional multi wafer charge system up to 25 wafers Deposited materials Metals, Oxides, Semiconductors, Organics
We design and manufacture complete deposition thin film processing equipment solutions for R&D or pilot production applications. Based on most advanced technologies, our products include a complete array of turnkey systems using chemical or physical deposition, sputtering or etchnig processes
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In order to satisfy the need to obtain products through deposition with different technologies, we are able to design and build multi-process machines able to operate automatically both in sequential and single mode
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We pay special attention to specific customer needs, offering complete tailor made systems designed to achieve the performance required by the customer and provided with a process guarantee
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Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD Applications PECVD is used to produce high-quality semiconductor and dielectric films required for various applications, like low and high-power semiconductor devices, photovoltaic solar cells' active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more. - Consumer Electronics - Automotive Industry - Solar energy - Aerospace and Defence - Healthcare and medical devices - Optics and Photonics - Wear resistant coatings Key features - RF showerhead electrode for uniform electric field and gas distribution - Modular process gas manifold with mass flow controllers for up to 12 gases - Optional vapor source controller for liquid Precursor (i.e. TEOS) with tank/cylinder in a closed cabinet for safe refill - Automatic process pressure control - Alternatively Hot Wire CVD - In situ spectroscopic plasma monitoring - Optional automatic or manual load lock (optional pre-heating and/ or plasma treatments) - Optional wide range optical thickness monitor for the control of layer thickness - Optional in situ spectroscopic ellipsometry for thickness measurement Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics Plasma Enhanced CVD - the right choice for obtaining large area compound materials mixing gaseous and/or liquid precursors at any temperature
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