Metalorganic Chemical Vapor Deposition is a method of depositing thin films on a substrate surface through a chemical reaction between one or more reactive gases and the substrate. Using this method is it possible to create high purity dielectric, metallic or semiconducting thin films. In the MOCVD process, ultrapure metalorganic precursor gases are introduced into a reactor, where they undergo pyrolysis on the semiconductor wafer. As a result, the subspecies are absorbed onto the wafer surface. The metalorganic precursor is introduced into the process chamber via a system known as “bubbler”, which uses an inert carrier gas (such as He or Ar) to transport the precursor liquid into the chamber. MOCVD operates at moderate pressures (1 to 760 Torr) in the gas phase. Metal Organic Chemical Vapor Deposition: the best choice for obtaining compound materials with finely tailored composition starting from liquid precursors MOCVD is commonly used in the production of laser diodes, LEDs, and semiconductors for advanced optoelectronics, high power and high-speed electronics, enabling mass production of semiconductor heterostructures via bandgap engineering. Furthermore, MOCVD can be utilized to precisely fabricate 0D, 1D, and 2D nanomaterials. KEY FEATURES - Metal organic liquid precursors - HV or UHV configuration - Reactive gases (SiH4, NH3, H2, CH4, N2, etc.) and/or liquid or solid precursors controlled directly from the software - Optional vapor source controller for liquid Precursor with tank/cylinder in a closed cabinet for safe refill - Optional single or multiple automatic or manual load lock with optional pre-heating and/or plasma treatments - Optional wide range optical thickness monitor for the control of layer thickness APPLICATIONS - Consumer Electronics - Solar energy - Aerospace and Defense - Healthcare and medical devices - Optics and Photonics - Power electronics - Research TECHNICAL DATA Base pressure HV < 1x10-6 mbar Base pressure UHV < 1x10-8 mbar Pumping system Dry, Turbomolecular pumps Sources Heating power supply Additional sources Plasma generator Deposition area Up to 12” Substrate handling Rotation: up to 50 rpm Process temperature Up to 800 °C Reactive process One or more reactive gases (O2, H2, N2, etc.) and liquid precursors Thickness uniformity Up to 3% Process control Optional optical monitor according to deposited material type Substrate load Manual in main Chamber or by Load Lock with manual or automatic manipulator Load lock Single or Multiple Load Locks, manual or motorized with multiple substrate holder Multi wafer loading Optional multi wafer cassette system up to 25 wafers Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics
We design and manufacture complete deposition thin film processing equipment solutions for R&D or pilot production applications. Based on most advanced technologies, our products include a complete array of turnkey systems using chemical or physical deposition, sputtering or etchnig processes
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In order to satisfy the need to obtain products through deposition with different technologies, we are able to design and build multi-process machines able to operate automatically both in sequential and single mode
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We pay special attention to specific customer needs, offering complete tailor made systems designed to achieve the performance required by the customer and provided with a process guarantee
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Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD Applications PECVD is used to produce high-quality semiconductor and dielectric films required for various applications, like low and high-power semiconductor devices, photovoltaic solar cells' active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more. - Consumer Electronics - Automotive Industry - Solar energy - Aerospace and Defence - Healthcare and medical devices - Optics and Photonics - Wear resistant coatings Key features - RF showerhead electrode for uniform electric field and gas distribution - Modular process gas manifold with mass flow controllers for up to 12 gases - Optional vapor source controller for liquid Precursor (i.e. TEOS) with tank/cylinder in a closed cabinet for safe refill - Automatic process pressure control - Alternatively Hot Wire CVD - In situ spectroscopic plasma monitoring - Optional automatic or manual load lock (optional pre-heating and/ or plasma treatments) - Optional wide range optical thickness monitor for the control of layer thickness - Optional in situ spectroscopic ellipsometry for thickness measurement Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics Plasma Enhanced CVD - the right choice for obtaining large area compound materials mixing gaseous and/or liquid precursors at any temperature
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