Thermal Chemical Vapor Deposition is a method of depositing thin films on a substrate surface through a thermally activated chemical reaction between one or more reactive gases and the substrate. This deposition technique is used for the deposition of silicon, silicon dioxide, silicon nitride and for the production of carbon nanotubes and graphene. In thermal CVD process, the precursor gas molecules are introduced into a heated chamber in vacuum atmosphere, reacting with the substrate surface at high temperatures, depositing a thin film of the desired material onto the substrate. The substrate is heated to provide the energy needed for precursor reaction and/or decomposition, because the high temperature enables the gas to react with the substrate, improving crystallinity and density of the thin film. Thermal Low Pressure CVD: the best choice for obtaining compound materials with finely tailored composition starting from gaseous precursors Thermal CVD is a common method for depositing various materials including Silicon Oxide (SiO2), Silicon Nitride (Si3N4), Silicon Carbide (SiC), transition metal oxides (Ta2O5, TiO2, and ZrO2), transition metal silicates (SiO2)–(ZrO2) alloys, and carbon-based materials like graphene and carbon nanotubes. KEY FEATURES - Hot Wall CVD or LPCVD configuration, up to 1200 °C. Precise and auto tuneable temperature control with completely settable ramp parameters - Single or multiple furnaces in Hot Wall or Quartz Tube configuration. - Reactive gases (SiH4, NH3, H2, CH4, N2, etc.) and/or liquid precursors controlled directly from the software - Optional vapor source controller for liquid Precursor with tank/cylinder in a closed cabinet for safe refill - Optional single or multiple automatic or manual load lock with optional pre-heating and/or plasma treatments APPLICATIONS - Consumer electronics - Aerospace and Defense - Healthcare and medical devices - Optics and Photonics - Energy storage - Catalysis TECHNICAL DATA Base pressure HV < 1x10-6 mbar Base pressure UHV < 1x10-8 mbar Pumping system Dry primary pump, Turbomolecular high vacuum pump Sources Resistive or infrared Additional sources Optional plasma generator Deposition area Up to 12” Substrate handling Multi wafer holder Process temperature Up to 1000°C Reactive process One or more reactive gases (O2, H2, CH4, SiH4, etc.) Thickness uniformity Up to 3% Process control Pyrometer or thermocouple for temperature control Substrate load Manual in main Chamber or by Load Lock with manual or automatic manipulator Load lock Single or Multiple Load Locks, manual or motorized with multiple substrate holder Multi wafer loading Optional multi wafer cassette system up to 25 wafers Deposited materials Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics
We design and manufacture complete deposition thin film processing equipment solutions for R&D or pilot production applications. Based on most advanced technologies, our products include a complete array of turnkey systems using chemical or physical deposition, sputtering or etchnig processes
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In order to satisfy the need to obtain products through deposition with different technologies, we are able to design and build multi-process machines able to operate automatically both in sequential and single mode
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We pay special attention to specific customer needs, offering complete tailor made systems designed to achieve the performance required by the customer and provided with a process guarantee
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Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD Applications PECVD is used to produce high-quality semiconductor and dielectric films required for various applications, like low and high-power semiconductor devices, photovoltaic solar cells' active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more. - Consumer Electronics - Automotive Industry - Solar energy - Aerospace and Defence - Healthcare and medical devices - Optics and Photonics - Wear resistant coatings Key features - RF showerhead electrode for uniform electric field and gas distribution - Modular process gas manifold with mass flow controllers for up to 12 gases - Optional vapor source controller for liquid Precursor (i.e. TEOS) with tank/cylinder in a closed cabinet for safe refill - Automatic process pressure control - Alternatively Hot Wire CVD - In situ spectroscopic plasma monitoring - Optional automatic or manual load lock (optional pre-heating and/ or plasma treatments) - Optional wide range optical thickness monitor for the control of layer thickness - Optional in situ spectroscopic ellipsometry for thickness measurement Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics Plasma Enhanced CVD - the right choice for obtaining large area compound materials mixing gaseous and/or liquid precursors at any temperature
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