By RASIRC
The first tool to enable stable and particle-free delivery of high concentration hydrogen peroxide gas, enabling lower process temperatures, greater use of new materials and high process throughput. Hydrogen Peroxide gas eliminates problems associated with other oxidants used in semiconductor fabrication processes. Ozone and oxygen plasma are too aggressive, penetrating below the interface layer and damaging both surface structures and bottom electrodes. Both ozone and water lead to dense interface layers. In addition, plasma cannot deeply penetrate high aspect structures, resulting in non-uniform step coverage/conformality and non-uniform etch rates. Water is less reactive than hydrogen peroxide gas and requires higher process temperatures. These properties make water a poor choice with new materials, new precursors, and lower thermal budgets. Hydrogen peroxide gas is more reactive than water at low temperatures. High reactivity enables process engineers to use precursors that normally would not react with water or ozone. This reactivity also results in active removal of carbon. Hydrogen peroxide gas achieves higher density nucleation than other oxidants. Hydrogen peroxide has less steric hindrance than water or ozone because it decomposes into hydroxyls on surfaces. The resulting dense layer of hydroxyls creates an ideal surface for ALD.
Ultra-Dry Hydrazine Gas for Low Temperature Nitrides Reducing Agent & Nitride Source Low Temperature, High Aspect Ratio Hydrazine is an excellent low temperature thermal ALD nitride source as well as an excellent reducing agent. Next generation devices have low thermal budgets and high aspect ratio structures that create new challenges for conformal nitride films. Traditional solutions cannot meet these new challenges. Thermal ammonia does not yield quality nitride films below 400°C. Plasma does not deliver the step coverage and conformality needed for high aspect ratio structures and causes surface damage. Advantages of Hydrazine Gas - Highly reactive, enabling thermal ALD at much less than 400°C - No line of sight required, providing uniform films on high aspect ratio structures - No oxygen or carbon, eliminating contamination - Fewer device defects - Better electrical performance - Strong reducing agent for surface conditioning/cleaning of various metals BRUTE Hydrazine ampoules from left to right: OEM 5-Valve Vessel, 1,000g Vaporizer, 250g Vaporizer, and 100g Vaporizer
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High Concentration Hydrogen Peroxide Gas Hydrogen peroxide gas as a process reactant enables unique reaction pathways compared to conventional oxidants, delivering high reactivity while minimizing interface damage relative to ozone and oxygen plasma. BRUTE Peroxide delivers high concentrations of Hydrogen Peroxide (H 2 O 2) gas to the process chamber. An ampoule of BRUTE Peroxide contains anhydrous hydrogen peroxide absorbed onto a proprietary solid substrate, enabling high purity, stable delivery of H 2 O 2 gas with low water content. BRUTE Peroxide is compatible with both carrier gas and vacuum draw, making it easy to adapt to any process. Benefits of BRUTE Peroxide - Differentiates between H 2 O 2 and water in process reactions - Reacts faster and at lower temperatures than water - Removes carbon and hydroxylates interface surfaces - Improves compatibility with metal surfaces—less aggressive oxidant than ozone or O 2 Plasma - Superior penetration into 3D high aspect ratio microstructures - Allows high concentration H 2 O 2 delivery into vacuum and low pressure applications - Increases interface hydroxyl density on Si, Ge and SiGe films - Enables in situ cleaning without liquid - Proprietary delivery process, ensuring higher purity
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