By Expertech
Applications involving SiC, GaN, Semiconductor, and MEMS device processing require exceptional film uniformity and low defect density. With over 30 years of technical expertise, we understand how to develop innovative equipment that meets your process requirements, including unique solutions to introduce new film types, augment production capacities for existing processes, and other specialized configurations. Expertech can design and manufacture horizontal and vertical furnace systems for the following processes: LPCVD Thermal Diffusion Processes - Stochiometric Nitride (Si3N4) - Anti-Reflection Coatings (ARC) - Low-Stress Nitride (Si Rich Nitride) < 250 MPa - Ultra-Low Stress Silicon Nitride < 100 MPa - Undoped Polysilicon or a-Silicon - Phosphorous-Doped Polysilicon or a-Silicon - Boron-Doped Polysilicon or a-Silicon - Undoped Poly-SiGe - Phosphorous or Boron-Doped Poly-SiGe - Undoped Low Temperature Oxide (LTO) - Phosphorous-Doped Glass (PSG) - Boron and Phosphorous-Doped Glas (BPSG) - Undoped Deposited Oxide by TEOS - Phosphorous-Doped TEOS Oxide (PSG) - Boron and Phosphorous-Doped TEOS (BPSG) Atmospheric Pressure Processes - Wet or Dry Oxidation/Densification - Dry/Wet/Dry Gate Oxide Cycles - Inert Gas Anneals/Densification (N2, Ar, He) - Contact Sintering / Alloy (N2, Forming Gas) - Reducing Atmosphere Anneals (Forming Gas) - Phosphine + O2 Phosphorous Doping - Phosphine Gas Phase Doping - POCl3 + O2 – Liquid Source Phosphorous Doping - BBr3 + O2 – Liquid Source Boron Doping - Solid Source Phosphorus Doping - Solid Source Boron Doping - Drive-in/Redistribution
