Our industry-leading FDX fully depleted silicon-on-insulator (FD-SOI) platform is purpose-built for intelligence at the edge, delivering unparalleled energy efficiency and adaptive performance to support always-on, intelligent devices. Achieve lower power and higher integration with FDX There is a growing need for real-time, responsive experiences to power the next generation of intelligent systems. FDX solutions are proven to deliver uncompromising energy efficiency, adaptive performance and a robust suite of application-optimized enhancements for increased design freedom, empowering you to bring your consumer or industry solution to life at the edge or beyond. Leading RF/mmWave performance: Leading front-end and back-end feature set enables long-range, secure wireless connectivity with power efficiency improvements Ultra-low voltage & leakage: Build on FD-SOI’s inherent leakage advantages with the option for ultra-low voltage (ULV) operation and ultra-low leakage (ULL) logic and SRAM Adaptive body biasing (ABB): Harness FD-SOI’s architectural advantage to dynamically optimize performance and energy efficiency with greater design flexibility Flexible feature set: Robust, application-optimized suite of enhancements, including automotive-grade options, embedded non-volatile memory (eNVM) solutions, flexible voltage support and AI toolkits Manufacturing reliability: Supplying ICs in flagship products of global Tier-1 companies, with multi-site manufacturing across accredited facilities in Malta, New York and Dresden, Germany Advanced packaging: Support for advanced packaging integration with proven wafer warpage management, prototyping-ready through-silicon via (TSVs) and bonding fabric for 2.5/3D integration Engineered for intelligence at the edge Our FDX production-proven process technology is the most advanced planar technology in volume production since 2019, delivering leading advantages in RF, power, performance and area. Access 700+ qualified IPs: Comprehensive IPs across foundation, analog, complex I/O, RF, eNVM, ABB and power management Industry’s first back-biasing ecosystem: First and only back-biasing ecosystem enables ABB without the need for unique EDA tools 3.3V & 5V input/outputs (I/Os): Develop integrated, compact SoCs <0.5pA/cell SRAM, <0.4vdd ULP: Ultra-efficient compute and power savings Up to 25V transistors: Flexible integration of high-voltage and logic functions on a single chip >350GHz fT &>400GHz fmax: RF transistors for best-in-class mmWave SoCs and MMICs enabling long-range connectivity and high-res sensing Up to 1 full-node performance & power benefits: Enabled by FDX’s adaptive/forward body bias Auto qualified up to 150°C: High-endurance operation and robust lifetime in demanding environments
