Process engineers commonly use PECVD silicon dioxide as an electrical insulation layer or dielectric isolation film in the microfabrication of critical devices. PECVD oxide films offer consistent coverage and reliable electrical properties across the wafer. Typical applications include dielectric isolation layers, interlayer insulation, and MEMS device passivation. We deposit standard PECVD oxide films up to 5µm thick, with extended depositions to 6µm available on 100mm and 150mm wafers based on customer need, in our MEMS foundry. Available options: - PECVD oxide - Low-temperature PECVD oxide Maximum Thickness: Up to 5µm standard; up to 6µm on 100mm and 150mm wafers by customer need; 1µm maximum on 300mm Property Control: Standard and low-temperature recipes Typical Applications: Dielectric isolation, interlayer insulation, device passivation
