By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
High-speed anisotropy etching with precision control Method is based on separate management of inductively bound plasma density and ions energy accelerated by RF-bias on wafer. It provides independent regulation of the plasma chemical reaction rate and degree of directed ion bombardment, allowing for high process selectivity and repeatability. SemiTEq systems design joint with software versatility allow to provide wide range of technological processes (Si, SiO2, SiNx, SiC, A3B5, metals & etc.) using fluorine or chloride chemistry as well as Bosch-process. Operating table special design ensures an efficient heat transfer due to helium blanket. Basic technologies SiC deep plasma chemical etching to form metallization on the GaN transistor reverse side - Etching selectivity: 50:1 Ni (Cr) - Rate: more than 0,5 μm/min - Etching depth: more than 100 μm - Inclination angle: 85° GaAs deep plasma chemical etching to form metallization on the GaAs transistor reverse side - Rate: from 2 to 5 μm/min - Etching depth: more than 100 μm - Inclination angle: 85° Si plasma chemical etching with high aspect ratio (Bosch-process) - Uniformity: ±2,5% on wafer Ø100 mm - Etching depth: more than 100 μm - Rate: more than 5 μm/min - Inclination angle: 85-90° - Selectivity: 1:5 Si plasma chemical etching low wall roughness - Uniformity: ±2,5% on wafer Ø100 mm - Gas: SF6/O2 - Etching depth: more than 10 μm - Rate: more than 1 μm/min - Inclination angle: 90° SiO2/Si plasma chemical etching with high selectivity - Etching selectivity: SiO2/Si 10:1 - Uniformity: ±2.5% on wafer Ø100 mm Si plasma chemical etching - Etching depth: 3 μm - Inclination angle: 85-90° Poly-Si high selectivity plasma chemical etching - Rate: 100 nm/min - Poly-Si to SiO2 selectivity etching: ≥30:1 - Uniformity: ±5 % Mo plasma chemical etching - Rate: 100 nm/min - Uniformity: ±5 % InGaAs/AlGaAs plasma chemical etching GaAs/AlGaAs plasma chemical etching for VCSEL
