By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Molecular beam epitaxy of A3N compound semiconductors Method for producing heteroepitaxial structures in ultra high vacuum based on atoms or molecules deposition evaporated from heated sources onto heated substrate. Two activated nitrogen delivery modes are available for heterostructures growth based on A3N -plasma activation (PA-MBE) or thermal decomposition of ammonia directly on the substrate (NH -MBE).The ability to select one of these modes or combine them within a single technology cycle allows for stable high-quality heterostructures over a wide temperature range. Patented design of key components provides extremely high temperatures on the substrate (>1200°C) as well as reliable work of heating stage during a long growth cycle. It allows to obtain active layers of semiconductor devices with extremely low dislocation density comparable with MOCVD method of epitaxial growth.Their performance allows to obtain heterogeneous quality of powerful and high-frequency devices. Basic technologies HEMT structure layers resistance measurements on wafer Ø3” GaN thickness uniformity measurement results on wafer Ø150 mm High quality GaN layers obtained by MBE
