By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Inductively Coupled Plasma Chemical Vapor Deposition Method used to deposit material on a substrate surface. This plasma is generated by an RF generator in an inductively coupled plasma (ICP) source. The process gases are decomposed into ions and radicals, which are then deposited as thin films on the substrate surface.Controlled ion bombardment allows the density, voltage and morphology of the deposited material to be controlled without loss of growth rate. SemiTEq system design ensure precise control of refractive index, buffer oxide etch rate, mechanical tension in thin films obtained during deposition process.Optimized gas supply system allows to achieve excellent thickness uniformity and refractive index of deposited films. Laser interference system provides film thickness and growing rate in-situ control.
