By DB HiTek
0.13μm RF SOI CMOS Single (2.5V) for switch or dual gate oxide process (1.2V / 2.5V) for LNA 5V CMOS + 5V LDMOS for one chip solution (Controller/PA/LNA) - ’26, Apr.Substrate: Trap-rich SOI Up to 1Poly 5Metal process (with UTM), 1Poly 2~3Metal + 1~2 UTM (Four configuration)Fully Characterized PDK and Industry Standard CAD Tools Inductor
