We harness FinFET’s three-dimensional architectural advantages, transistor density and strength to deliver high-performance, area advantages, low-leakage and operating voltage for unrelenting power efficiency. Unlock increased performance & unrelenting power management with FinFET With over a decade of high-volume production, our FinFET process technologies are production-proven across consumer and industrial applications. Backed by our vast single-fin and multi-fin IP libraries, we offer the most complete FinFET solution on the market, delivering unrelenting power management and high-performance capabilities. - Automotive-ready: Automotive-grade solutions and robust portfolio of automotive-ready IPs and design resources - Built to scale for RF applications: RF-optimized features deliver high performance, power efficiency and area advantages - Trusted U.S. manufacturing: Demonstrated high-volume manufacturing at our Malta, New York facility, full PDKs and broad IP availability, including single-fin libraries - Leading power efficiency: Up to 20% lower logic core power compared to 22nm-class technologies, ultra-low SRAM leakage (0.5 pA/cell HD retention) and integrated 3.3V/5V power management - Robust enhancements: Added integrations including leading RF, ULL and LDMOS devices for low leakage general purpose I/Os (GPIOs) - Advanced packaging: Including through-silicon via (TSVs) to support 2.5/3D integration, interposers and wafer-to-wafer (W2W) bonding The industry’s most complete FinFET solution With over 3 million wafers shipped since 2015, our FinFET platform is production-proven across consumer and industrial applications as the world’s most complete and competitive FinFET solution. - Auto Grade 1 qualification: Up to 150°C for industry-grade reliability - Single-fin libraries: For simpler, smaller, low-leakage and reliable I/Os - Next-level 12nm PPA: Corner tightening across our digital platform enables up to 7–8% total power reduction, 3% performance gain and 20% leakage reduction (vs 2025 benchmarks) - Up to 30% area compaction: Versus 22nm planar and 7.5T best-in-class power, performance and area (PPA) for high-performance and reduced area - Radiation resilience by design: 3D architecture enables improved total ionizing dose (TID) resilience and reduced soft-error rates, supporting reliable operation in harsh environments - RF optimized for <15GHz applications: With RF enhancements in pipeline - Production-proven single-fin: Optimized for lower power usage - Capacitance density up to 43 fF/µm: Enabling compact, high-performance on-chip capacitors Comprehensive, customizable enhancements for your needs We offer next-level customization capabilities with application-focused feature enhancements. Whether you need higher drive or lower power, we enable you to build on our FinFET process technology for a solution that fits your application needs.
