By InZiv
Near-field optical probing that shows you exactly where light travels inside your PIC — not just what comes out the other end. Key Features In-Circuit Optical Visibility See light propagating inside your PIC — not just at the ports. Root Cause Failure Analysis Pinpoint the exact location of optical loss and identify design deviations — without damaging your device. Zero Device Damage Non-destructive optical probing — your device is never damaged during characterization. The InZiv Solution Representative schematic illustrating real-time optical propagation inside a silicon photonics waveguide, based on InZiv electro-optical inspection capabilities. Real-Time Optical Visibility Inside Silicon Photonics Circuits InZiv applies its electro-optical inspection expertise to silicon photonics, addressing a core industry limitation: black-box testing. Instead of measuring only light in vs. light out, InZiv tracks how light propagates inside waveguides in real time, revealing coupling losses, wavelength-dependent behavior, optical modes, and physical defects that directly impact yield and performance. This capability enables faster root-cause analysis, tighter process control, and a scalable path from R&D to manufacturing How Omni-SiPh LightView Works InZiv’s near-field optical probing technology images light propagation directly inside the photonic integrated circuit — giving engineers visibility into exactly where light travels, where it degrades, and where it deviates from design. Near-Field Scanning Images the waveguide at high spatial resolution — capturing in-circuit light propagation non-destructively, at die and wafer level In-Circuit Visibility Maps light propagation through the full device — including resonators, splitters, multi-path routing, and complex optical architectures — not just port-to-port. Root Cause Localization When a device underperforms, LightView pinpoints the exact location of optical loss or design deviation. Reduces iteration cycles from weeks to hours. Flexible Probe Architecture Near-field, deep-trench, and angled probes adapt to any device geometry. Custom probe designs available for specific customer architectures. Key Measurements Optical propagation and loss mapping Coupling efficiency and wavelength-dependent behavior Waveguide optical power distribution Full wafer electro-optical testing Technical Specifications The table below outlines representative performance targets used to illustrate inspection challenges; actual requirements vary by application and system design. Access to buried & deep-trench structures: Probe waveguides located deep inside complex SiPh stacks — InZiv designs and fabricates custom deep-trench optical probes with >100 µm tip length, large Z-scan range (~85 µm), and tailored angles, enabling optical access to otherwise unreachable architectures. Waveguide propagation loss: Minimize dB/cm loss across circuit — InZiv tracks light propagation inside the waveguide in real time, directly revealing where optical loss occurs rather than inferring from input/output measurements. Coupling efficiency: High, wavelength-stable coupling — High-NA lensed fiber and angled probes expose coupling inefficiencies and alignment sensitivity that standard I/O tests cannot see. Wavelength-dependent behavior: Stable performance across operating bands — Spatially resolved optical mapping shows how different wavelengths propagate differently in the same structure, enabling fast root-cause identification.
