By INESC Microssistemas e Nanotecnologias
The deposition suite is equipped with a comprehensive array of techniques for thin film deposition, supporting advanced material development and microfabrication applications. Deposition systems include magnetron sputtering, ion beam deposition (IBD) and plasma-enhanced chemical vapor deposition (PECVD), including more than 29 sputter targets available simultaneously in the sputtering machines (single and multitarget configurations). The machines enable deposition of thin films from 0.3 nm up to several micrometers, with good uniformities across (up to) 200mm wafer diameter. Several substrate sizes and thickness and type are possible (glass, silicon, flexible coatings). OUR EQUIPMENT - Nordiko 2000 (Magnetron/RF sputtering) - Nordiko 3000 (IBD) - Nordiko 3600 cluster tool (IBD) - Nordiko 7000 (Magnetron sputtering) - SCIA Magma 200 (Magnetron sputtering) - Nordiko 8800 (Magnetron sputtering) - UHVI - Metallic single target - UHVII - Oxide single target - Alcatel multitarget - Oxford Plasma Pro 100 (PECVD) - Aixtron NanoInstruments Black Magic (PECVD) - Yield Engineering YES 15 HMDS (Vapor priming) Nordiko 3600 cluster tool (IBD): Ion beam deposition of metals and dielectrics on up to 8 inch wafers. The system has 6 targets to deposit multilayer structures with precise and automatic control of film thickness. Typical structures are spin valves and tunnel junctions, read gap oxides, passivation layers. Base pressure 5x10-8 Torr. Nordiko 8800 (Magnetron sputtering): Multi-target magnetron deposition system (up to 8" wafers). Available 8 targets (e.g. CoFe, CoFeB, NiFe, MgO, MnPt, FeB, Cr, Co, Ru). Oxford Plasma Pro 100 (PECVD): Thin-film deposition system that uses plasma-enhanced chemical vapor deposition to achieve high-uniformity coatings (a-Si:H, SiO2, SiNx, a-Si,C:H) with precise control over film properties like stress, refractive index, and density. It features advanced plasma source options (RF and LF), supports temperatures up to 400°C, and accommodates various substrate sizes up to 200 mm wafer size.
