By NenoVision
Semiconductors are the foundation of modern electronics, enabling everything from computing to data storage. As devices shrink and become more complex, precise failure analysis is critical. Failure Analysis with AFM-in-SEM LiteScope integrated directly into the FIB/SEM environment, enables in-situ, site-specific electrical and topographical characterization of semiconductor components at the nanoscale. It delivers precise dopant profiling and conductivity mapping without compromising sample integrity. Key Benefits & Features - True Site-Specific Electrical Characterization: Navigate directly to specific vias, transistors, or doped layers and perform localized electrical AFM analysis with nanoscale precision. - In-situ sample characterization: Perform sample preparation and in-situ analysis within the same vacuum cycle, avoiding surface oxidation or contamination. - Complex and correlative sample analysis — Reduce time and cost per analysis: Eliminate time-consuming sample transfers and redundant tool usage — streamline failure localization into a single workflow. Application areas - NAND Flash memory - SRAM & Logic circuits - Transistors (FinFET, CMOS,...) - SOI & Advanced nodes - Thin films
