To probe the electrical transport properties, the team utilized the Nano-Observer’s ResiScope mode. This advanced conductive-AFM capability enables current and resistance mapping over wide dynamic ranges without damaging sensitive samples. High-quality metallic nanocontacts were precisely aligned to MoS₂ nanofingers using t-SPL’s direct overlay capability. A p-doped single-crystal diamond tip then mapped current and resistance distributions under 0.5 V DC bias. Key ResiScope Results: - Strong electrical contrast at MoS₂-substrate edges - Power-law decay of current: I(d) ∝ d⁻¹·¹ with distance from contact - Local resistivity estimation: ~5 Ωm (competitive with state-of-the-art MoS₂) - Real-time topography-correlated electrical maps Why ResiScope for 2D Materials? ResiScope’s key advantages for fragile 2D semiconductors: - Wide Dynamic Range: Simultaneous measurement of high and low resistance regions - Non-Destructive: Avoids sample or probe damage even on ultra-thin materials - Quantitative: Direct resistance values, not just qualitative current maps - Correlated Imaging: Real-time topography + electrical properties
