The GF Burlington site is a global center of excellence for RF and GaN technologies, with decades of expertise supporting high‑performance connectivity and power applications. Since its founding in 1957, our Burlington site has been a pioneer in specialty semiconductor manufacturing. One of the world’s original 200mm fabs, the site has evolved into a center of excellence for RF-SOI, silicon germanium and gallium nitride technologies. Acquired in 2015 as part of the IBM Microelectronics business, Burlington supports wireless communications, automotive, defense and critical infrastructure applications worldwide. The site is one of the largest private employers in Vermont and is designated as a U.S. Department of Homeland Security facility. 1,800 employees and contractors 1957 operations established 600k total wafer capacity per year (200mm equivalent) Technologies manufactured here: - Power BCD - RF-SOI - SiGe - Feature-rich CMOS
