PECVD silicon nitride films provide surface passivation and dielectric protection in MEMS and semiconductor devices, shielding device structures from environmental exposure while maintaining reliable electrical isolation. Typical uses include passivation layers, moisture barrier coatings, dielectric insulation, and protective coatings for MEMS devices. Unlike our LPCVD silicon nitride, these films deposit at low temperatures, so they can go down over existing device layers. We deposit PECVD silicon nitride films in thicknesses up to 2µm with low-stress recipes; standard nitride films run up to 0.5µm. Available options: - PECVD nitride - Low-temperature PECVD nitride - Low-stress PECVD nitride (<250 MPa tensile) - Low-temperature, low-stress PECVD nitride Maximum Thickness: Up to 0.5µm (standard) Property Control: Low-temperature options preserve underlying metal layers Typical Applications: Passivation, moisture barriers, protective coatings Low-stress nitride: Up to 2µm | <250 MPa tensile; low-temperature option available | Stress-matched membranes, multilayer stacks
