Proven partially depleted RF‑SOI technologies optimized for low RF loss and high linearity in switching and tuning, enabling highly integrated, low‑loss RF front‑end designs at scale. Boost RF performance, signal power & reliability with RF-SOI As RF front-ends become more integrated, RF solutions that can maintain signal integrity within tight space constraints are critical. Our RF‑SOI technologies deliver low RF loss, strong signal isolation, high linearity for RF switching and tuning and highly integrated front‑end capability. Backed by high‑volume manufacturing and broad adoption, our RF‑SOI solutions enable efficient connectivity across extended signal ranges. Low RF loss, strong signal isolation RF-SOI high-resistivity substrates and buried oxide advantage minimize RF losses and coupling for excellent signal integrity and isolation in dense, multi-band environments. Highly integrated RF front-end capability GF RF-SOI enables compact, scalable integration of RF switches and front-end building blocks, supporting efficient RF front-end implementations from sub-6GHz and above* (*depending on RF-SOI process technology). High linearity for RF switching & tuning Engineered substrates and isolated device architectures support high linearity and higher power handling for switches and tuning functions. Achieve consistent & reliable RF performance Demonstrated RF-SOI technology strengths, backed by decades of RF process development, deliver consistent RF performance and scalable, high-volume deployment of integrated RF front-ends. - Broad RF front-end deployment: Ranging from smart mobile devices, wireless infrastructure and SATCOM systems – with options for different levels of integration and performance - Strong Ron·Coff figure of merit for RF switches: Our XSW process technologies demonstrate generational advancements in Ron·Coff, enabling optimized RF switch performance for advanced RF front-end modules - Measured low-noise receive performance: Low-noise receiver benchmarks on RF-SOI NSX technology demonstrate suitability for low-noise front-end designs, including Ku-band applications - Multi-site manufacturing reliability: Production-ready, manufactured at volume across our U.S. and Singapore facilities for scalable deployment and supply assurance - mmWave-optimized back-end-of-line (BEOL): Optimized for low RF loss and strong isolation in advanced front-end and beamforming architectures (available on select RF-SOI mmWave technologies) - Characterized RF performance: Extensive characterization using large-signal RF metrics, including harmonics and IM3, delivering predictable performance and design confidence
