By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Reactive ion etching Method is based on simultaneous occurrence of a chemical reaction between plasma radicals and wafer material, and the physical interaction with surface of ion materials accelerated by RF bias onto wafer electrode.The joint action of these mechanisms ensures formation of an anisotropic etching profile with a high aspect ratio. SemiTEq systems design joint with software versatility allow to provide wide range of technological processes (Si, SiO 2, SiN x, SiC, A3B5, metals & etc.) using fluorine or chloride chemistry.Operating table special design ensures an efficient heat transfer due to helium blanket. Basic technologies Si3N4 plasma chemical etching - RIE
