By INESC Microssistemas e Nanotecnologias
Reactive Ion Etching (RIE) RIE is a plasma-based etching technique primarily used for material removal rather than deposition. It employs chemically reactive plasma to achieve isotropic/ anisotropic etching, enabling the creation of precise, high-aspect-ratio features. Main Features: - Wafer sizes up to 200mm diameter - Batch processing (up to 25 wafer cassettes) - Exceptional Wafer Uniformity: Achieves excellent wafer uniformity with a precision of ±1%. - Metal etching: using Fluorine and Bromine- based Plasmas - Oxide etching: using Fluorine and Chlorine – based Plasmas Ion Milling: Ion Milling uses a focused ion beam to physically sputter away material from the substrate, allowing for precise control over etching depth and surface planarization. Oxygen plasma Ashing: Organic films removal with oxygen-based plasma. With end point detection for accurate control of the etching process. By integrating deposition techniques like PVD and CVD with advanced processing methods such as RIE and Ion Milling, INESC MN offers a complete workflow for thin-film fabrication, from material deposition to device nano/microfabrication.
