By DB HiTek
Innovative MS/RF Design Support 90nm Digital + Analog 90nm channel length with 0.11um shrunk BEOL Support Various Vop (1.2V, 3.3V, 5V)PNO gate oxide is used for lower 1/f noise characteristics than TS11 process (TS09 Process) eNVM: ~128Kbit Anti fuse (eMemory)Digital IP/Lib: Multi Vth Std. Cell Lib, IO Lib, Memory Compiler SPICE model including Mismatch & Noise, Cadence PDK
