Industry-leading silicon germanium (SiGe) technologies for high-frequency applications offering the perfect balance of speed, performance, cost, reliability and efficiency High speed, low noise, power efficient As mobile experiences evolve and data center bandwidth demands grow, the need for solutions that can balance power efficiency and performance is unprecedented. By combining SiGe heterojunction bipolar transistors (HBT) with CMOS (BiCMOS), our SiGe technology offers high-voltage swing, output power and uncompromising signal integrity. - Broad application versatility: Spanning mobile and Wi-Fi, wireless infrastructure, optical communications, automotive radar, SATCOM and high-speed analog for data centers - High performance, optimized design: Strong high-frequency performance, low noise and amplifier efficiency with extensive RF and digital integration on an economical silicon base - Leading speed & bandwidth: Exceptional ft/fmax offering the performance necessary to empower next-generation mmWave and optical transceiver applications - Global manufacturing: High-volume, multisite manufacturing across our U.S. and Singapore facilities for scale and reliability - Leading design enablement: Rich suite of active and passive devices, comprehensive device models and PDKs and low-loss back-end-of-line (BEOL), with the ability to codesign RF, analog and digital circuits on a single chip - True BiCMOS integration: Select platforms enable true monolithic integration of high-speed SiGe HBTs and CMOS, supporting power-efficient RF and high-speed analog architectures Achieve best-in-class performance at the right cost With decades of innovation, we are unlocking the full potential of SiGe, delivering silicon-proven process technologies that set the benchmark for high-performance RF designs across wireless, optical and infrastructure markets. - Over 4 billion chips shipped to date: Demonstrated high-volume, silicon-proven SiGe technology and manufacturing leadership - Manufacturing at the scale you need: 300mm and 200mm high-volume manufacturing available across our U.S. and Singapore facilities - Ready to support 200G/λ: High-performance (HP) speed and technology features engineered to support 200G/λ - Optimized for cost & performance: Modular technologies and features enable solutions in multiple markets spanning cost and performance needs - SiGe HBT with ft/fmax > 400GHz: Industry-leading SiGe HBT with enhanced analog performance and bandwidth for high-frequency RF and mmWave applications - Better performance at reduced power consumption: Enables lower power consumption for low noise amplifiers (LNAs), highest gain for optical TIAs and drivers
