High-precision grating formation on compound semiconductor substrates such as GaAs and InP. We support lambda/4 phase shifts and wavelength tuning for DFB lasers, enabling high-throughput mass production. Why Choose SCIVAX Sub-nm-Level Pitch Control Pattern pitch is controlled at the sub-nanometer level, enabling stable formation of high-precision gratings on compound semiconductor substrates for mass production. Support for Lambda Shift and Chirped Gratings We support lambda/4 phase-shift gratings and chirped gratings (pitch-modulated gratings). By incorporating design information into the master mold, complex optical structures can be mass-produced with high precision and repeatability. ±1 μm-Level Alignment Alignment accuracy of ±1 um is possible. Support for phi 2″ to phi 8″ Substrates Mass production is supported for compound semiconductor substrates such as InP and GaAs from phi 2″ to phi 8″. Contract Processing from 10 to 1,000 Wafers/Month We flexibly support everything from small-lot prototyping to mass production at the 1,000 wafers/month level, with integrated support for production launch. Specifications Supported Substrate Materials: InP, GaAs, and other compound semiconductors Substrate Size: φ2″ – φ8″ Pitch Accuracy: Sub-nm-level control Grating Structures: Uniform gratings, lambda/4 phase shift, chirped gratings Alignment Accuracy: ±1 μm level Production Scale: 10 to 1,000 wafers/month (up to 50 wafers/day) Lead Time (Prototype): Test pattern fabrication: about 2 months plus evaluation / mold fabrication: 1 to 1.5 months Process Flow Step 1 — Customer: Epitaxial Growth and HM Film Deposition — Epitaxial growth and SiO2/SiN hard mask deposition on a compound semiconductor substrate Step 2 — SCIVAX: Nanoimprint — Nanoimprint the grating pattern Step 3 — Customer: Residual Layer and HM Etching — Pattern the residual layer and hard mask by dry etching Step 4 — Customer: Grating Etching and Removal — After dry/wet etching the grating layer, remove the NIL layer and HM Molding Examples DFB Grating Formation on a 3-Inch InP Wafer — A 200 nm pitch grating is uniformly formed across the entire 3-inch InP wafer, achieving oscillation wavelength variation within ±0.1 nm. Half-Pitch 50 nm L/S (12-Inch Si Wafer) — Half-pitch 50 nm L/S on a 12-inch Si wafer Molding Examples — lambda/4 Phase-Shift Structure Molding Examples — Residual layer <30 nm Foundry Consultation for Compound Semiconductors We will propose a solution tailored to your specifications and production scale. Please feel free to contact us.
