By Holonyak Micro & Nanotechnology Lab
Elionix G150 Electron Beam Lithography (EBL) system 150kV thermal field emission minimum linewidth ~5nm overlay accuracy ~ 15nm Stitching error < 15nm (100mm field) handle up to 6 inch wafer - High resolution: ~10nm due to the wavelength of electrons used in EBL is significantly smaller than that of photons used in optical lithography - Maskless Patterning: Unlike traditional optical lithography, EBL does not require physical masks. Patterns are generated directly with CAD software, enabling rapid prototyping and flexibility in design modifications
