Unlock increased RF output power and efficiency with our RF GaN process technologies, delivering cost-optimized, high-power density and performance at a smaller form factor. Powering the revolution of wireless connectivity with RF GaN The number of connected devices is growing and data traffic is accelerating. Wide-bandgap materials such as gallium nitride (GaN) enable higher RF power, efficiency and frequency operation across demanding applications. Our RF GaN technologies are uniquely positioned to translate GaN’s intrinsic advantages into commercially viable solutions and overcome the limitations of existing infrastructure. GaN-on-Si advantage We uniquely leverage GaN-on-silicon (GaN-on-Si) integration to unlock GaN’s commercial potential- enabling cost-effective, high-volume manufacturing. High RF performance Excellent gain and efficiency across FR1 and FR3 frequency bands enables high-performance, power-optimized solutions for both D-mode and E-mode devices. High power density Our RF GaN offers superior performance RF for both D-mode and E-mode devices, empowering designers to optimize output power, efficiency and linearity. Thermal reliability Engineered to address thermal performance challenges inherent in high-power RF operation, supporting sustained performance in demanding applications. Trusted U.S. manufacturing Home to industry-leading RF-SOI and SiGe technologies, our accredited Burlington, Vermont facility offers time-tested robust process controls and advanced copper backend integration. Backed by proven RF leadership Building on our decades of RF expertise, our RF GaN technology offers robust PDKs with RF models, GlobalShuttle™ MPW program runs and dedicated tapeouts. The ultimate in power density & efficiency Harnessing GaN’s high electron mobility, low capacitance and wide-bandgap capabilities, we deliver powerful, efficient RF solutions in smaller form factors, optimized for power amplifiers, SATCOM systems and broad frequency RF applications. Excellent gain in FR1 & FR3 frequency bands High RF power density with exceptional efficiency for power-constrained platforms Up to 70% power-added efficiency (PAE) Greater RF efficiency helps reduce power consumption and heat dissipation for sustained performance D-mode devices Enable 12–28V and 1-15 GHz operation for high‑power, high‑frequency RF for infrastructure applications E-mode devices Enables seamless integration into RF modules that require a positive gate supply voltage Up to 5 W/mm power efficiency Achieve more RF output power with fewer devices, reducing system complexity, footprint and thermal impact in high-power RF designs CMOS-compatible Compatible with CMOS silicon RF and mixed-signal integration for scalable system designs and long-term manufacturability RF GaN technologies at-a-glance We are developing a comprehensive RF GaN portfolio targeting low and high voltage applications. Engineered for harsh environments, our RF GaN technologies deliver outstanding RF performance and power density through scalable options that meet diverse RF requirements across consumer and industrial applications.
