By Karlsruhe Nano Micro Facility (KNMF)
KNMFi Laboratory for Micro- and Nanostructuring Electron Beam Lithography EBPG5200Z - Substrate: 4” and 6“ wafer; special piece parts (on request, minimum size 20 mm x 20 mm) - High voltage: 100 kV - Main field: ≤ 1310 μm - Resolution: < 1 nm (depends on main field size) E-Beam lithography in extremely thick PMMA (3200 nm) with structural details in submicron range (~ 200 nm) E-Beam lithography down to 20 nm scale in PMMA (resist thickness < 100 nm). Features - Aspect ratio up to 10 depending on geometry - Structural details ≥ 20 nm - Resist thickness up to 3200 nm (e.g. for electroplating of high aspect ratio gold structures required for X-ray lithography) Limitations/constraints - Standard Resist: PMMA Design rules - Rounding of structural edges - Design of dummy structures for stress reduction - Homogeneous structure allocation (in case of subsequent electroplating) Materials Substrate materials: silicon, glass, metal Other resist and substrate materials on request
