AlixLabs launches Power ALE platform for GaN and SiC power devices

26 October 2026. AlixLabs AB has introduced Power ALE™, its application of Atomic Layer Etching to wide-bandgap power semiconductor manufacturing, with an initial focus on SiC and direct applicability to GaN. The platform combines Atomic Layer Etching with a semiconductor-fab-compatible hardware and software architecture. The equipment is built around a 300 mm platform while supporting 150, 200 and 300 mm wafers, corresponding to 6-, 8- and 12-inch formats.

The system uses a vertically configured plasma chamber that combines an inductively coupled plasma (ICP) source with independently controlled wafer bias. Both RF sources support pulsed operation and synchronization. The chamber integrates independent active thermal management across the pedestal, showerhead, walls and lid. Substrates are held by mechanical clamping or an optional electrostatic chuck (ESC), and yttria-coated field-replaceable liners provide plasma confinement. A modular gas system isolates corrosive gas delivery from non-corrosive gases and enables sub-10 ms dosing.

For SiC, Power ALE™ can support plasma etching, trench profile engineering, sidewall smoothing and surface conditioning. In AlixLabs SiC work, the as-received trench sidewall had an Sa of approximately 0.95 nm and Sq of 1.22 nm. Two optimized ALE processes reduced Sa to approximately 0.49-0.50 nm and Sq to approximately 0.61-0.64 nm, roughly a 47-48 percent reduction in average sidewall roughness. Cross-sectional SEM analysis indicates minimal impact on the overall trench profile.

For GaN, the architecture can support precision GaN and AlGaN etching, E-mode HEMT gate recess, surface smoothing and preparation of sensitive semiconductor interfaces. AlixLabs reports GaN surface Rq decreasing from approximately 0.13 nm to 0.070 nm after Power ALE™, and SiC Rq decreasing from approximately 0.162 nm to 0.071 nm in the examples presented. The company states that the eventual improvement in finished SiC device characteristics still needs to be established through device fabrication and electrical characterization.

AlixLabs is also developing ALE for GaN surface smoothing, SiNx processing and more advanced GaN structures. Its work within the EU funded ALL2GaN program includes GaN-on-SiC, D-mode and E-mode HEMTs, alternative substrates and emerging vertical and nanostructured GaN device concepts. The equipment uses a production-grade load-lock and robotic wafer-handling platform, and the 300 mm automation architecture can be adapted to smaller wafer formats.

Source: AlixLabs AB news