Munich, 26 October 2026. Infineon Technologies AG will supply the world's first 900 V gallium nitride (GaN) monolithic bidirectional switches (BDS) to Enphase Energy, Inc. for deployment in its solid-state transformer (SST) power modules. The devices extend the operating voltage range of GaN technology to 900 V while maintaining its high-frequency switching characteristics.
The devices are intended for power conversion architectures in applications including AI data centers. SSTs are described by the company as a key building block for next-generation power distribution architectures, where efficiency, power density and reliability are critical requirements. Silicon carbide (SiC) is widely used in high-voltage power conversion systems, and the new CoolGaN 900 V monolithic BDS adds a further option for SST architectures that benefit from high-frequency operation and integrated bidirectional switching.
Adam White, Division President Power Systems at Infineon, said: "With our new 900 V CoolGaN BDS, we are extending the range of applications where customers can benefit from the efficiency and power density advantages of GaN and bringing the technology into a voltage class that opens new possibilities for high-performance power conversion systems."
Enphase led the development and system-level demonstration, building on more than ten years of in-house research into GaN-based power conversion, with device technology and engineering support from Infineon. The two companies previously partnered on 650 V GaN BDS technology for the Enphase IQ9 Microinverters.
Hans van Antwerpen, Senior Vice President and Chief Technology Officer at Enphase Energy, said: "Moving to 900 V gives us more voltage headroom while retaining the benefits of high-frequency switching."
Unlike conventional power switches, monolithic GaN BDS devices integrate bidirectional voltage blocking and current conduction in a single device. The higher blocking voltage supports the industry's transition toward 800 V and future 1,500 VDC power distribution architectures. The 900 V GaN BDS devices have been tested and are now being integrated into Enphase's IQ SST product development, with production qualification expected to follow.
Source: Infineon Technologies AG news
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