Munich, 21 October 2026. Infineon Technologies AG is advancing its collaboration with NVIDIA on 800 Volt direct current (VDC) power architectures for AI data centers. The announcement was timed with NVIDIA's GTC Berlin developer conference and centers on the high-voltage intermediate bus converter (IBC). Infineon said its gallium nitride (GaN) technology is emerging as well-suited technology of choice for this stage.
The work builds on joint efforts first announced in May 2025 and detailed further in October 2025, which centered on enabling serviceable, hot-swappable 800 VDC server racks. "AI is fundamentally reshaping the demands we place on power infrastructure, and semiconductors are at the heart of solving that challenge," said Jochen Hanebeck, CEO, Infineon Technologies AG.
Infineon said data centers have adopted intermediate-bus architectures in which an IBC steps down the main bus voltage feeding accelerator cards into a lower-voltage rail. This multi-stage approach reduces distribution losses while meeting constraints on board area, thermal limits and uptime. As AI infrastructure scales, 800 VDC is being introduced alongside existing AC and lower-voltage DC architectures as an additional distribution option for higher-density compute.
Compared to silicon, GaN allows power devices to switch faster with lower losses, enabling switching frequencies of up to 1 MHz at the IBC stage. This allows the size of magnetic components and passives to shrink, translating into higher power density and lower board heights. GaN's low conduction and switching losses support conversion efficiency and help limit heat generation as power levels per rack climb toward the megawatt range.
In combination with PSoC control C3 and EiceDRIVER product families, full system solutions for IBCs are provided by Infineon. The company's GaN portfolio supports conversion ratios at the HV IBC stage including 800 V to 50 V, 800 V to 12 V, and 800 V to 6 V. Infineon and NVIDIA also collaborate on power path protection solutions, announced in October 2025, targeting hot-swap controller functionality for future server boards in 800 VDC architectures.
Source: Infineon Technologies AG news
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