Atomic Layer Deposition is a method of depositing thin films on a substrate surface through a chemical reaction between one or more reactive gases and the substrate. It is an advanced deposition technique that enables the deposition of ultra-thin films with exceptional precision. During ALD process, one or more reactive gases are introduced into a vacuum chamber, where they react with the substrate surface to deposit a thin film via a chemical reaction. This deposition method involves introducing gas phase precursors into the process chamber one by one, in a series of sequential, non-overlapping pulses. By reacting sequentially with the surface of the substrate, each precursor forms a self-limiting layer, and the reaction stops when all the reactive sites are consumed. Through repeated exposure to separate precursors, a thin film is slowly deposited. ALD technology enables the production of a broad range of functional films with different electrical, optical and mechanical properties, including high-k dielectric, protective, anti-reflective, and gas diffusion barrier layers. The low deposition temperature also allows for the creation of inorganic/organic polymer composites. KEY FEATURES - Vapor source controllers for liquid Precursors with tank/cylinder in a closed cabinet for safe refill - High speed pulsed valves for alternating precursor delivery - Single or multiple furnaces in Hot Wall or Quartz Tube configuration. - Reactive gases (SiH4, NH3, H2, CH4, N2, etc) and/or liquid precursors controlled directly from the software - Optional load lock with pre-heating and/or plasma treatments - Optional Plasma Enhanced configuration - Optional Emission Spectrometer for in-situ plasma diagnostics and End Point Detection APPLICATIONS - Consumer Electronics - Aerospace and Defense - Healthcare and medical devices - Optics and Photonics - Energy storage - Catalysis TECHNICAL DATA Base pressure HV < 1x10-6 mbar Base pressure UHV < 1x10-8 mbar Pumping system Dry primary pump, Turbomolecular high vacuum pump Sources Thermal Additional sources Plasma DC, DC pulsed or RF for PEALD configuration Deposition area Up to 12” Substrate handling n.a. Process temperature Up to 800 °C Reactive process One or more reactive gases (O2, H2, CH4, etc.) and liquid precursors Thickness uniformity Up to 3%
We design and manufacture complete deposition thin film processing equipment solutions for R&D or pilot production applications. Based on most advanced technologies, our products include a complete array of turnkey systems using chemical or physical deposition, sputtering or etchnig processes
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In order to satisfy the need to obtain products through deposition with different technologies, we are able to design and build multi-process machines able to operate automatically both in sequential and single mode
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We pay special attention to specific customer needs, offering complete tailor made systems designed to achieve the performance required by the customer and provided with a process guarantee
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Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD Applications PECVD is used to produce high-quality semiconductor and dielectric films required for various applications, like low and high-power semiconductor devices, photovoltaic solar cells' active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more. - Consumer Electronics - Automotive Industry - Solar energy - Aerospace and Defence - Healthcare and medical devices - Optics and Photonics - Wear resistant coatings Key features - RF showerhead electrode for uniform electric field and gas distribution - Modular process gas manifold with mass flow controllers for up to 12 gases - Optional vapor source controller for liquid Precursor (i.e. TEOS) with tank/cylinder in a closed cabinet for safe refill - Automatic process pressure control - Alternatively Hot Wire CVD - In situ spectroscopic plasma monitoring - Optional automatic or manual load lock (optional pre-heating and/ or plasma treatments) - Optional wide range optical thickness monitor for the control of layer thickness - Optional in situ spectroscopic ellipsometry for thickness measurement Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics Plasma Enhanced CVD - the right choice for obtaining large area compound materials mixing gaseous and/or liquid precursors at any temperature
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