By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
UHV e-beam evaporation system with load-lock chamber STE EB71 system is intended for e-beam evaporation of thin films in high and ultra-high vacuum and allows to evaporate ohmic contacts to AlGaN (Ti/Al/Ni/Au) and GaAs (Ge/Au), as well as produce microwave transistor gates and MMIC. System capacity - 6×Ø2” - 3×Ø3” - 1×Ø100mm - 1×Ø150mm - 1×Ø200mm Ultimate pressure - <2x10-9 Torr Evaporator crucible volume - up to 6x7 cm 3 or 4x15 cm 3 E-beam digital scanning system - Available Adjustable evaporator-to-wafer distance - from 350 mm to 500 mm Wafer heating - up to 350°C* Antidust removable screens - Available Thickness uniformity of evaporated material on wafer Ø100 mm - ±2,5% Key features High quality thin film deposition in UHV Optimized materials cosumption by adjustable evaporation-to-wafer distance Improved thickness uniformity due to the special "mask" technology
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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