By planarTECH
This is a standard planarGROW-4S CVD system for graphene with the addition of an RF-ICP module.
planarRIE-4B product specification CHAMBER UNIT •Chamber Body: SUS304 •Chamber Size: 270mm (OD) x 85mm (H) •60(OD)mm Electrode Port & KF25 Pumping Port •200(OD)mm Shoer Head Port and ¼” Gas Feeding Port •¼” Vent Port & 500(OD)mm View Port •Anodized Aluminum Door – Manually Operated SUBSTRATE UNIT •Max. Wafer Size: 4-inch Wafer •300W, 13.56MHz RF Generator with Auto Matching Network •SUS-based Anodized Aluminum Covered Electrode •Water-cooled, 6(OD)mm Flexible Hose • Plasma Shield Assembly &Teflon Insulator GAS SHOWERHEAD UNIT •SUS316 Door Embedded Type •¼” Gas Feeding Port & 2(OD)mm Gas Feeding Hole •¼” Purge Port for Venting Chamber VACUUM & PUMPING UNIT • 150 l/min Rotary Pump •CG202-N Vacuum Sensor • Flexible Exhaust Bellow • Optional: Automatic Pressure Control w/ Motorized Throttle Valve, Baratron Gauge & Controller • Optional: Dry Pump, Turbo-molecular Pump GAS SUPPLY UNIT •Three (3) Mass Flow Controllers o Argon (Ar) o Tetrafluoromethane (CF4) o Oxygen (O2) • One Open Mounting Bay for Additional MFC • ¼” Pneumatic Gas Valves • 4 Channel, GMC1200, MFC Controller ELECTRICAL CONTROL UNIT •PLC-based Control with 8.4” Touch-screen Display •Optional: Fully-automated PC Control o MS Windows 7 Pro Embedded PC o Intel Core2Duo E5700 3.0G o National Inst. LabVIEW User Front End o Samsung 19” LCD Monitor o Recipe Open/Save Function & Auto Process Mode • Safety Controls: Water and Air with Pressure Switch • Pneumatic Valve Control SYSTEM SIZE & UTILITY REQUIREMENT •Weight: approx. 150kg •System Dimensions: 700(W)x700(D)x600(H)mm • Power: 220V, Single-phase, 50A • Clean Dry Air: 5kgf/cm2, 6(OD)mm Connector • Water: 2-3kgf/cm2, 3/8” SUS 304 Pipe KEY BENEFITS •Self-contained benchtop unit requiring minimal space •13.56 MHz 300W RF generator with automatic matching network delivering excellent repeatability •8.4-inch touchscreen for ease of operation • Automatic pressure control with throttle valve available • Multiple choices of etching processes: o Chemical etching (isotropic, fast rate) o Reactive ion etching (anisotropic, medium rate) o Physical etching (anisotropic, slow rate)
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planarRIE is an anisotropic plasma etching system that is designed to deliver optimum performance at low cost with high degree of process repeatability. It can handle wafers up to the size of 100mm (or 4 inches) in diameter. Depending on how it is configured, the system can be used for etching of oxides, nitrides, polymers, silicon, and III-V compounds. The system can accommodate a wide range of process gases. Standard are 3 mass flow controllers for precise control of gas flow rates with 1 more slot available for future expansion.
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Example of a Customized planarRIE-4C Full-sized System for Si and Polymer Etching (Installed at IIT-Kanpur, India)
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