Grat-Ink TM:High-quality graphene inks. Bluestone’s Grat-Ink TM products consist of well dispersed graphene nano-flakes in aqueous or NMP (N-Methyl-2-pyrrolidone) solutions. These graphene dispersions can be made with or without binders for specific applications and coating methods to form conductive films. Grat-Ink TM solutions are ideal for a wide range of applications such as conductive additives to polymers, conductive papers, thermal dissipation, EMI shielding, and conductive inks. Features & Benefits - Available in aqueous or in NMP solvents - Optional binder additives for enhanced adhesion and mechanical strength - Ease of handling and processing - Batch-to-batch product consistency Technical Specs Product ID: Grat-Ink-101B, Grat-Ink-101N, Grat-Ink-102B, Grat-Ink-102N Solvent: Water, Water, NMP, NMP Solid (wt%): 5~6, 5~6, 11~12, 11~12 Sheet resistivity normalized to 1 mil (W/sq.): As deposited ~63, ~9, ~120, ~42; After pressing ~13, ~3, ~24, ~6 Density (g/cm3): ~0.95, ~0.89, ~0.97, ~0.67 Drying (minutes): ~6 min @ 80 o C, ~6 min @ 80 o C, ~12 min @ 80 o C, ~12 min @ 80 o C Viscosity (cps): 12.8, 1.25×102, 4.45×103, — Coverage (cm2/g/mil): 64, 41, 78, 156 Binder: Yes, No, Yes, No The compression ratio is about 50%. The final resistance value may vary depending on the pressing pressure and the compression ratio. DISPERSION CAN BE CUSTOMIZED AND/OR TO YOUR IDEAL PRODUCT SPECIFICATIONS.
Graphene film coverage 95% with occasional holes and cracks (< 5 %) Monolayer graphene percentage 95% of cracks or holes larger than 3 mm: 0 Average Raman Id/Ig < 5% within domain Average Hall mobility of 2000-4000 cm 2/Vs at n=1e12 /cm 2 Average sheet resistance of 300-600 ohm/sq. Available Sizes: 1cm x 1cm, 2” or 4” wafer Wafer spec: thermal grown 285-nm SiO2 on p-type Si substrate (resistivity <0.005 ohm-cm)
CATEGORY
Monolayer percentage 95% Optical transmittance at 550 nm 97% (excl. substrate) Average Raman Id/Ig < 5% within domain Average Hall mobility of 2000-4000 cm 2/Vs at n=1e12 /cm 2 Average sheet resistance of 300-600 ohm/sq. Available Sizes (in 2): 2 x 2, 4 x 4, 8 x 10, 12 x 14 Copper thickness 1mil (25 µm)
CATEGORY
Isolated single graphene domain Large graphene domain (30 – 200 µm) Average Raman Id/Ig < 5% within domain Available Sizes: 2” wafer Wafer spec: thermal grown 285-nm SiO2 on p-type Si substrate (resistivity <0.005 ohm-cm)
CATEGORY
