By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Rapid thermal processing system in vacuum and controlled gas environment Technologies: Thermal processing STE RTP150 systems are intended for long-time processing of semiconductor wafers in different types of atmospheres at extreme temperatures. The universal system configuration allows to anneal ohmic contacts in aggressive gas environments due to the isolated plate arrangement. System capacity - 1×Ø100 mm - 1×Ø150 mm Ultimate pressure - <10 Torr Max heating temperature - up to 1300 ℃ Heating uniformity on wafer Ø100 mm - ±2 % Key features 01 Graphite or quartz heating table 02 Halogen heaters 03 Programming and storage of technological recipes
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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