By Annealsys
An RTP platform for annealing compound semiconductor wafers. The AS-Premium is a multiconfiguration RTP platform that can process silicon and compound semiconductor wafers up 150 mm diameter or square. The system can be used for R&D applications with manual loading and for production applications with cassette to cassette atmospheric robot loading or a vacuum cluster tool. Applications: - Rapid Thermal Annealing (RTA) - Implant annealing - Contact annealing (III-V and SiC) - Rapid Thermal Oxidation (RTO) - Rapid Thermal Nitridation (RTN) - Annealing of piezoelectric and pyroelectric materials - Getter activation - Rapid Thermal Evaporation (RTE) - Selenization (CIGS solar cells) - Sol-gel densification and crystallization - Etc. AS-Premium specifications: The AS-Premium reactor with the loadlock and turbo pumps provide oxygen free environment for silicon smoothening and other oxygen sensitive processes. The Annealsys AS-Premium system can process samples up to 150 mm diameter or 156×156 mm². The reactor platform and the machine have been designed to accommodate a wide range of configurations to meet customers’ requirements in terms of process. The chamber can receive a single side or a double side lamp heating furnace. The design of the process chamber allows manual loading and the connection to a cluster tool or a glove box (options). Pyrometer and thermocouple temperature control are standard features. The fast digital PID temperature controller provides high temperature reproducibility. Graphite and silicon carbide coated graphite susceptors are available for processing of samples with encapsulation. The square process chamber of the AS-Premium: The square process chamber of the AS-Premium makes it suitable for processing photovoltaic substrates up to 6-inch by 6-inch. - Temperature range: RT to 1250°C (depending upon version) - Ramp rate up to 100°C/s - Gas mixing capability with mass flow controllers - Vacuum range: Atmosphere to 10-6 Torr Optional features of AS-Premium furnace: The AS-Premium chamber can be provided with manual loading, loadlock loading or cassette to cassette loading including vacuum cluster tool. - Furnace and loading configurations - Graphite and silicon carbide coated susceptors - Rough vacuum pump and turbo pump, turbo pump - Automatic pressure control with throttle valve - Fast cooling system
Annealsys Direct Liquid Injection Chemical Vapor Deposition (DLI-CVD) machines are equipped with DLI vaporizers for the utilization of the widest range of chemicals including low vapor pressure and thermally unstable precursors. These machines offer multi process capabilities inside the same process chamber: CVD, ALD, MOCVD, pulse pressure CVD and RTP, RTCVD for the MC-050. Applications: optical waveguides, optical coating, MIMS capacitors, microwave integrated circuit, superconductors, ferroelectric memories, bioactive and biocompatible coatings, thermal and anticorrosion barriers, micro-batteries and more. Processes: - Simple and multi-metallic oxides (see application notes) - Nitrides, metals, and alloys - 2D and 3D materials - III-V, wide band gap semiconductors Substrates: - Silicon – Compound semiconductor – Single crystals – Silicon carbide wafers - Poly silicon wafers for solar cells - Glass substrates - Metals - Others Deposited Materials: - Oxides: BaO, Y2O3, Cr2O3, TiO2, Al2O3, HfO2, Li2O, SiO2, LIPON, Bi2O3, Co3O4, CuCrO2, SiO2, LiNbO3, LaNiO3, SiZrOx, SrTiO3, BaTiO3, MovCrwFexBiyOz - 2D materials: Graphene, h-BN, TMDs (MoS2, WS2, etc.) - Metals: Pt, Mo, W, Ru …. - Nitrides: TiN, AlN Advantages of our technology Our DLI Technology. DLI vaporizers can handle both liquid and solid chemical precursors. Solid precursors need to be dissolved into an organic solvent. The technology is a particularly well suited method for low vapor pressure and thermally unstable liquid or solid ALD and CVD precursors. Exceptional Multi-Process Capability: Annealsys DLI-CVD machines support a wide variety of deposition processes CVD, ALD, MOCVD, pulse-pressure CVD, plus in-situ RTP and RTCVD, all within the same process chamber. Thermalized Chamber Walls: Annealsys DLI-CVD reactors are designed with thermally controlled walls that focus deposition solely onto substrates, avoiding unwanted deposition on chamber walls which simplifies cleaning and maintenance. Fine Precursor Flow Control: The DLI vaporizers enable accurate liquid flow control, fast on/off vapor switching, minimal dead volume and efficient precursor usage. This helps in achieving sharp interface control, accurate control of doping levels and reduced chemical consumption. Precursor container remains at room temperature: In the DLI-CVD systems the chemical precursors are stored into special and pressurizzed stainless steel tanks. The precursors remain at room tempeature until they are injected into the vaporizers for the process. This avoid decomposition of the chemicals into the precursor tanks. Design and Maintenance: These systems are engineered for low maintenance, with low operational costs, and high reliability, which makes them attractive for long-term use in both R&D and production. Kemstream Vaporizing technology: Annealsys DLI-CVD systems are equipped with Kemstream patented direct liquid injection vaporizers. The technology benefits are real non-contact type and flash vaporization process for low vapor pressure compounds and thermally unstable molecules. Applications Guidelines: These machines can perform different types of processes inside the same chamber: DLI-CVD, DLI-ALD, DLI pulse pressure CVD. The two-inch machine can in addition run infrared assisted ALD and CVD, RTP, RTCVD and MOCVD processes. - Simple and multi-metallic oxides Nitrides, metals, and alloys - 2D and 3D materials - III-V, wide band gap semiconductors Processes Acronyms: DLI: Direct Liquid Injection CVD: Chemical Vapor Deposition ALD: Atomic Layer Deposition MOCVD: Metal Organic Chemical Vapor Deposition
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Multi-process capability in the same chamber: DLI-CVD, DLI-ALD, MOCVD, RTP, RTCVD. The MC-050 offers the widest capabilities for development of new materials including single and multi-metallic oxides as well as transition metal dichalcogenides (TMD) and other 2D materials. - Simple and multi-metallic oxides - Metals, nitrides and alloys - III-V, wide band gap semiconductors - 2D materials: Graphene, Boron Nitride, MoS2, WS2, MoSe2, WSe2 … - Etc. Direct liquid injection vaporizers with lamps heating make the MC-050 a unique machine with multi process capabilities like a cluster tool but inside a single process chamber. The Annealsys MC-050 system is a 2-inch DLI-CVD / DLI-ALD reactor developed to meet the requirements of research and development units. The infrared lamp furnace in association with the direct liquid injection vaporizers provide unique multi process capabilities inside the same process chamber: CVD, ALD, MOCVD, RTP and RTCVD. The Direct Liquid Injection (DLI) vaporizers provide perfect control of precursor flow and allow utilization of low vapor pressure and diluted chemical precursors. The fast switching of the precursor vapor flows associated with the by-pass valve provide perfect interface control for deposition of nanolaminates. The MC-050 is the perfect machine for the development of new materials and nanolaminates using the widest range of solid and liquid organometallic precursors. The MC-050 can perform chemical vapor deposition and atomic layer deposition processes using the widest range of organometallic precursors while offering in-situ annealing capability. - Temperature range: RT to 1100°C - Gas mixing capability with mass flow controllers - Up to 6 vaporizers - Vacuum range: Atmosphere to 10-3 Torr - Glove box loading option - High vacuum capability in option The MC-050 can be equipped with up to 6 direct liquid injection vaporizers and two bubblers for high vapor pressure precursors - Pyrometer temperature control - Rough vacuum pump, Turbo pump - Glove box interface and glove box - Remote plasma - Ozone generator
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Versatile 200 mm RTP/RTCVD system from Research to Production. From RT up to 1450°C down to 10-6 Torr. Extended RTCVD capabilities (option). The cold wall chamber in association with the pulse annealing capability is a unique solution for annealing of thermally sensitive substrates. Applications: - Rapid Thermal Annealing (RTA) - Implant annealing - Ohmic contact annealing (III-V and SiC) - Silicon carbonization - Rapid Thermal Oxidation (RTO) - Rapid Thermal Nitridation (RTN) - Diffusion, densification and crystallization - Selenization - Rapid Thermal CVD (Si poly, SiO2, SiNx) - Thermal annealing of polymers - Etc. Perfect RTP system for production applications. The AS-Master is the perfect RTP system for production applications with cassette to cassette loading system. The manual loading version can be used for process development. The Annealsys AS-Master Rapid Thermal Processor is a highly versatile tool allowing a wide range of processes from annealing to Rapid Thermal Chemical Vapor Deposition. The high temperature version can run annealing processes up to 1450°C and allows new process development. The cold wall chamber technology provides high process reproducibility under ultra clean and contamination-free environment. The extended temperature range, the vacuum performance (atmosphere to 10-6 Torr) and gas mixing capability make AS-Master suitable for a large range of RTP and RTCVD processes. Loadlock and cluster tool module versions are available for improved process environment cleanness. Manual loading and cassette to cassette versions make system suitable for process development and easy transfer to production. Characteristics: Highest temperature / duration infrared annealing performance on the market. The high temperature version of the AS-Master provides the highest temperature / duration infrared annealing performance on the market. - Temperature range: RT to 1450°C (depending upon version) - Ramp rate up to 200°C/s (depending upon version) - Gas mixing capability with mass flow controllers - Vacuum range: Atmosphere to 10-6 Torr Optional features: Can also be installed for performing RTCVD processes. The temperature control quartz window and the substrate rotation option associated with a special process chamber can be installed for performing RTCVD processes. - Furnace and loading configurations - Graphite and silicon carbide coated susceptors - Rough vacuum pump and turbo pump, turbo pump - Automatic pressure control with throttle valve - Fast cooling system
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MC-100 DLI-CVD and DLI-ALD deposition system 100 mm (4-inch) DLI-CVD / DLI-ALD deposition system The MC-100 is a 4-inch (100 mm) Direct Liquid Injection deposition system that can perform CVD, ALD, pulse pressure CVD inside the same process chamber. Applications include epitaxy of oxide layers like LiNbO3. - Simple and multi-metallic oxides - Metals, nitrides and alloys - III-V, wide band gap semiconductors - 2D and 3D materials - Etc. A 100 mm DLI-CVD / DLI-ALD reactor developed for research and development applications The MC-100 with the rotating substrate heater and possibility to adjust the height of the substrate inside the reactor provides enhanced thin film uniformity. The process chamber enables to perform CVD and ALD processes inside the same process chamber. The Direct Liquid Injection (DLI) vaporizers provide perfect control of precursor flow and allow utilization of low vapor pressure and diluted chemical precursors. The fast switching of the precursor vapor flows associated with the by-pass valve provide perfect interface control for deposition of nanolaminates. The automated liquid panel has been optimized for reduced consumption of chemical precursors. The no dead volume design provides full rinsing capability for easy change of chemicals and refilling of the precursor tanks in a glove box. The MC-100 system characteristics The MC-100 system has been developed for research applications with limited requirements for maintenance and easy change of chemistry for depositing different type of layers. - Temperature range: RT to 800°C - Up to 4 vaporizers - Gas mixing capability with mass flow controllers - Vacuum range: Atmosphere to 10-3 Torr Annealsys has developed liquid panels for the handling of air sensitive chemical precursors - Rough vacuum pump, Turbo pump - Motorized vacuum loadlock loading - ALD kit for water vapor delivery
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