STE3N

By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)

Advanced platform for A3N compounds growth Technologies: A3N STE3N systems are intended for R&D as well as pilot production and ensure extremely wide range of available growth parameters (effective flux nitrogen, max substrate temperature, process vacuum level, etc.). Patented design of key components provides extremely high temperatures on the substrate (>1200°C) as well as reliable work of heating stage during a long growth cycle. It allows to obtain active layers of semiconductor devices with extremely low dislocation density, and their performance reaches the advanced level in the field of MBE technology. STE3N can be optionally equipped with a plasma nitrogen source and an ammonia injector to meet the growth needs of InGaN, InAlN and AlGaN:Mg active layers. System capacity - Ø100 mm - Ø150 mm* Ultimate pressure - 5x10 -11 Torr In-situ monitoring system - RHEED, RGA, BFM, OFM, IR-pyrometer, laser interferometer Ports for sources - 8 for STE3N-8 - 10 for STE3N-10 Effusion cell capacity - up to 100 cm 3 for STE3N-8 - up to 300 cm 3 for STE3N-10 Grown layers thickness uniformity on substrate Ø3” for STE3N-8 - ±1 % Grown layers thickness uniformity on substrate Ø100 for STE3N-10 - ±1 % Key features 01 PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics 02 Substrate storage at load-lock and buffer chambers 03 NH3-MBE and PA-MBE