A400 DUO is a batch vertical furnace for 200 mm and smaller wafers, and focuses on applications in the markets for power, analog, RF, and MEMS devices. The A400 DUO furnace tool is capable of running low pressure CVD (LPCVD), as well as diffusion and oxidation applications. Productivity and compatibility. A400 DUO is a batch vertical furnace for 200mm and smaller wafers, and focuses on applications in the markets for power, analog, RF, and MEMS devices. Vertical batch processing increases productivity because a large stack of wafers can be loaded into the furnace chamber for simultaneous thermal processing. The new A400 DUO is compatible with the original A400, so existing process recipes can be easily transferred, accelerating system acceptance for production. Atmospheric thermal applications include diffusion and activation of dopants, annealing to affect material properties by heating to a specific temperature, and oxidation to form silicon oxide. LPCVD applications include polysilicon, silicon nitride, and silicon oxide. A 400 DUO benefits - Dual reactor configuration means that manufacturers can maximize throughput while minimizing costly semiconductor fabrication plant (fab) floor space; - Sequential batch processes available whereby an initial application is run in the first reactor and the wafers are then transferred to the second reactor under controlled oxygen-free environmental conditions to run another process application; - Dual boat operation means the reactor can be fully utilized for maximum throughput as a second boat of wafers is always staged and ready to run once the previous boat has finished; - Large integrated stocker which stores wafers awaiting processing to assure continuous production; - A400 DUO can be configured to process two different wafer sizes simultaneously, allowing flexibility especially for fabs transitioning to a larger wafer size. Major applications - Oxidation, both high and low temperature; - Anneal and cure; - Undoped and in-situ (P, As, B) doped polysilicon; - Silicon nitride; - Amorphous silicon; - TEOS; - Atomic Layer Deposition.
The XP8® DCM™ PECVD (Dual Chamber Module, Plasma Enhanced Chemical Vapor Deposition) system is a high-volume manufacturing (HVM) platform engineered for advanced dielectric film deposition, with expanded capabilities for SiO, SiCN for hybrid bonding, and stress-tunable SiN. Built on ASM's proven XP8® architecture, it integrates four DCMs, totaling eight reaction chambers, to maximize productivity and process control. The system is globally qualified and supports a broad range of applications across both logic and memory nodes. High volume, compact footprint. Major features The XP8® DCM™ PECVD is a high productivity PECVD tool that addresses a broad range of dielectric films for various low-temperature deposition applications, such as interconnect layers, passivation layers, and etch stop layers. XP8® DCM™ PECVD benefits - Compact footprint: Enables efficient Fab footprint - Robust process control: Offers independent chamber parameters (RF power, susceptor and showerhead temperature, liquid source flow) and shared parameters (gas flow, pressure, wall temperature) for precise chamber-to-chamber matching. - High cleaning efficiency: Remote plasma cleaning and hot-wall reactor design reduce film buildup and extend component lifetime. - True single wafer performance: Independent chambers ensure optimal process control per wafer. - Low volume chambers: Designed for efficient gas usage and fast cycle times. - Superior repeatability: Excellent chamber-to-chamber matching ensures consistent wafer-to-wafer results. - Low cost of ownership: Engineered for reliability and minimal maintenance overhead. - Fast maintenance access: Easy-open chamber design simplifies service and reduces downtime. - Energy efficient: Optimized for reduced power consumption without compromising performance Major applications - Low-k and ultra low-k Interlayer dielectrics (ILDs) for memory and logic back-end-of-line (BEOL) applications, where interconnect isolation and signal integrity are critical. The system supports tuning of key material properties including dielectric constant (k), plasma-induced damage (PID), and elastic modulus (EM) to meet stringent device performance and reliability requirements. - Dual capability for SiO films: One hardware design supports both thick and thin SiO (TEOS and Silane) deposition for packaging, logic, and memory applications. - SiCN films for hybrid bonding (HB): DCM along with ASM's state-of-the-art precursor chemistry, enable strong wafer bonding at lower temperatures with optimized copper diffusion barrier performance. - Stress-tunable SiN: Supports low-temperature deposition of high-compressive SiN films for advanced packaging applications, helping reduce wafer warpage and improve integration with glass substrates.
CATEGORY
Pulsar uses ALD to deposit the high-k dielectric materials required for advanced CMOS transistor high-k metal gates and other applications. Our most advanced Pulsar reactor is the AXIS, which includes a series of reactor improvements resulting in improved film uniformity, defect performance, and wafer-to-wafer repeatability. Additionally, the AXIS reactor package enables increased reactor lifetime between clean cycles and improved maintainability in volume production. Improved maintainability, uniformity, repeatability. Major features Our Pulsar® reactor helped to enable the switch to hafnium-based high-k dielectrics for transistor gates and is now being used to achieve the performance requirements of advanced node 3D transistor structures such as finFETs. The Pulsar reactor chamber and source delivery system are optimized for precise gas-flow dynamics and minimum purge times that provide advanced process control, film purity and uniformity. Pulsar is designed for gas delivery of solid source precursor materials which have demonstrably better film property performance than liquid precursors. Up to four Pulsar modules can be configured to the XP4 cluster platform, a member of ASM's 300mm XP common platform series. XP4 Pulsar ® benefits - Pulsar XP ALD is a low-volume, isothermal reactor optimized for ALD; - Cross-flow reactor design with precise laminar gas flow to optimize the ALD pulse delivery which results in excellent film properties, uniformity, purity and throughput; - Unique solid source delivery system which precisely controls the conversion of solid materials into gases for delivery into the reactor; - Inert gas valve design that assures process control of ALD pulse / purge cycling, enabling minimum cycle time and maximum throughput. Major applications - High-k gate dielectrics (hafnium oxide, hafnium silicate) - High-k capping layers for metal gate work function tuning - High-speed aluminium oxide - Conformal passivation layers - High-k for microelectromechanical systems (MEMS) applications
CATEGORY
Our Epsilon 2000 single-wafer epitaxy tool offers a wide variety of epitaxy applications for 150 mm and 200 mm wafers. They range from high-temperature silicon for wafer preparation to low-temperature selective or non-selective silicon germanium (SiGe) for forming transistor strain layers. Great variety of applications. Major features The Epsilon reactor uses integrated lamps to heat the wafer to a specified temperature to grow an epitaxial silicon-based film using chemical vapor deposition (CVD). A unique feature of the Epsilon is the patented Bernoulli wand for non-contact wafer transfer. Epsilon features the industry’s highest deposition rates at low temperatures due to its optimized performance with ASM’s Silcore® precursors. Epsilon benefits - Precise temperature control across the wafer surface, which enables highly uniform silicon layers - Bernoulli wand wafer transfer technology allows high temperature wafer transfer without damage to the wafer surfaces which enables high throughput compared to alternatives that have to delay the process to allow the wafer to cool down - Silcore® precursor provides silicon-based layers at high throughput, even at relatively lower temperatures compared to conventional precursors - PowerFill trench fill processing enables epitaxial layers to be sequentially deposited in deep trenches reducing the cost of traditional multiple process sequences Major applications - Selective and non-selective doped silicon layers for transistor formation; - Blanket silicon epitaxy for wafer manufacturing; - Epitaxy for analog mixed signal, bipolar and BiCMOS devices; - Deep trench fill epitaxy for power devices.
CATEGORY
XP8® JQCM™ is a high-performance 300 mm plasma-enhanced atomic layer deposition (PEALD) system, purpose-built for advanced silicon nitride (SiN) deposition in logic semiconductor manufacturing. Engineered for next-generation device fabrication, XP8® JQCM™ delivers uniform, reliable thin films with exceptional scalability, productivity, and process control. XP8 ® JQCM™ is a high-performance 300 mm plasma-enhanced atomic layer deposition (PEALD) system engineered for exceptional scalability and productivity in advanced semiconductor manufacturing. Supporting up to four independent quad chamber process modules (PM) per platform—with each PM integrating four reaction chambers (RC)—XP8 ® JQCM™ delivers high throughput and flexible process control within a compact footprint. Its advanced reactor design maximizes precursor efficiency, minimizes ALD cycle time, and enables low-temperature deposition of high-quality silicon nitride ( SiN ) films. With precise control over film stress and step coverage, XP8 ® JQCM™ ensures reliable, uniform thin films that meet the stringent demands of next-generation logic devices. XP8® JQ CM™ PEALD benefits - Independent reaction chambers (RCs) for optimal performance - Small-volume RCs for efficient gas use and rapid processing - Excellent RC-to-RC and chamber-to-chamber matching for superior wafer-to- wafer repeatability - Low cost of ownership - Easy-access chamber design for fast maintenance - Energy-efficient operation Major applications - SiN liners, spacers, and etch-stop layers - Spacer Defined Multiple Patterning - Void-free gap-fill with stress tunability for high aspect ratio structure applications
CATEGORY
