By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Rapid thermal annealing system STE RTA100 systems are specially designed for short-time annealing of semiconductor wafers with temperatures up to 1000°C in inert atmosphere. Systems are widely used for ohmic contact annealing in production lines for manufacturing of electronic devices based on A3B5 semiconductor compounds. System capacity - 1×Ø100 mm - 1×Ø150 mm Ultimate pressure - <10 Torr Max heating temperature - up to 1000 °C Heating uniformity on wafer Ø100 mm - ±2 % Key features 01 Graphite or quartz heating table 02 Programming and storage of technological recipes 03 Halogen heaters
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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