It is the best model for production of DFB-Laser diode for optical communication devices and for Academic and R&D as well. We realize high resolution and high throughput with 50kV. Beam diameter: < 2 nmΦ(for Academic and R&D) < 4 nmΦ(for Production) Accerelation voltage: 50kV, 30kV Stage size: 4 inch, 6 inch,8 inch wafer model Special Features ◆ TFE 50kV ◆ High resolution as same as 100kV ◆ High accurate stitch writing for long time by specially designed laser interferometer ◆ Multi-user environment (PC controlled EOC = Recipe) ◆ Self environment control - Thermal & noise free ◆ Flexible writing methods (vector, vector R-theta, raster, spot, axial symmetrical, field size modulation, multi-mode, 3D) User's Voice: City University of Hong Kong Specifications Electron Emitter/ Acceleration voltage: TFE (ZrO/W)/5 to 50kV Min. beam diameter: 2.0nm (for Academic and R&D) 4.0nm (for Production) Scan method: Vector scan (x, y) (Standard) Vector scan (r, θ), Raster scan, Spot scan (Optional) Advanced lithography functions (Optional): Field size modulation lithography, axial symmetry pattern lithography Field size: sq. 30μm - sq. 1000μm (50kV) (for Academic and R&D) sq. 30μm - sq. 1500μm (50kV) (for Production) Work piece size: 4，6，8inchΦ CAD software: Dedicated CAD (Standard), GDS II conversion (Optional), DXF conversion (Optional) OS: Windows
There is less forwardscatter of EB resist due to higher acceleration voltage.CABL-UH model has more accuracy less than 10nm. You can select 90kV, 110kV or 130kV due to your budget. Beam diameter: <1.6 nmΦ Accerelation Voltage: 130 kV, 110 kV or 90 kV Stage size: 8 inch wafer (you can use any other wafers less than 8 inch wafer) Special Features ◆ Vacc: 130kV Max (25-130kV, 5kV steps) ◆ Single-Stage Acceleration capability up to 130kV to minimize EOC size ◆ Micro-Discharge Free Electron Gun ◆ Beam Diameter: 1.6nm ◆ Electrostatic Lens between emitter and anode is designed to achieve very low aberration and short-rang crossover image at the center of blanking electrodes ◆ Ultra-stable write capability is achieved using dual thermal controllers Specifications Electron Emitter/ Acceleration voltage: TFE (ZrO/W)/25 to 130kV Min. beam diameter: 1.6nm Scan method: Vector scan (x, y) (Standard) Vector scan (r, θ), Raster scan, Spot scan (Optional) Advanced lithography functions (Optional): Field size modulation lithography, axial symmetry pattern lithography Field size: sq. 30μm, sq. 60μm, sq. 120μm, sq. 300μm, sq. 600μm, sq. 1000μm Work piece size: 4，6，8inchΦ (work pieces of other sizes and other shapes can be mounted with our flexible contrivances) CAD software: Dedicated CAD (Standard), GDS II conversion (Optiional)， DXF conversion（Optional） OS: Windows
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It is the best model for production of DFB-Laser diode for optical communication devices and for Academic and R&D as well. We realize high resolution and high throughput with 50kV. Beam diameter: < 2 nmΦ(for Academic and R&D) < 4 nmΦ(for Production) Accerelation voltage: 50kV, 30kV Stage size: 4 inch, 6 inch,8 inch wafer model Special Features ◆ TFE 50kV ◆ High resolution as same as 100kV ◆ High accurate stitch writing for long time by specially designed laser interferometer ◆ Multi-user environment (PC controlled EOC = Recipe) ◆ Self environment control - Thermal & noise free ◆ Flexible writing methods (vector, vector R-theta, raster, spot, axial symmetrical, field size modulation, multi-mode, 3D) User's Voice: City University of Hong Kong Specifications Electron Emitter/ Acceleration voltage: TFE (ZrO/W)/5 to 50kV Min. beam diameter: 2.0nm (for Academic and R&D) 4.0nm (for Production) Scan method: Vector scan (x, y) (Standard) Vector scan (r, θ), Raster scan, Spot scan (Optional) Advanced lithography functions (Optional): Field size modulation lithography, axial symmetry pattern lithography Field size: sq. 30μm - sq. 1000μm (50kV) (for Academic and R&D) sq. 30μm - sq. 1500μm (50kV) (for Production) Work piece size: 4，6，8inchΦ CAD software: Dedicated CAD (Standard), GDS II conversion (Optional), DXF conversion (Optional) OS: Windows
CATEGORY
It is the best model for production of DFB-Laser diode for optical communication devices. We realize high resolution and high throughput with 50kV.
CATEGORY
There is less forwardscatter of EB resist due to higher acceleration voltage.CABL-UH model has more accuracy less than 10nm. You can select 90kV, 110kV or 130kV due to your budget. Beam diameter: <1.6 nmΦ Accerelation Voltage: 130 kV, 110 kV or 90 kV Stage size: 8 inch wafer (you can use any other wafers less than 8 inch wafer) Special Features ◆ Vacc: 130kV Max (25-130kV, 5kV steps) ◆ Single-Stage Acceleration capability up to 130kV to minimize EOC size ◆ Micro-Discharge Free Electron Gun ◆ Beam Diameter: 1.6nm ◆ Electrostatic Lens between emitter and anode is designed to achieve very low aberration and short-rang crossover image at the center of blanking electrodes ◆ Ultra-stable write capability is achieved using dual thermal controllers Specifications Electron Emitter/ Acceleration voltage: TFE (ZrO/W)/25 to 130kV Min. beam diameter: 1.6nm Scan method: Vector scan (x, y) (Standard) Vector scan (r, θ), Raster scan, Spot scan (Optional) Advanced lithography functions (Optional): Field size modulation lithography, axial symmetry pattern lithography Field size: sq. 30μm, sq. 60μm, sq. 120μm, sq. 300μm, sq. 600μm, sq. 1000μm Work piece size: 4，6，8inchΦ (work pieces of other sizes and other shapes can be mounted with our flexible contrivances) CAD software: Dedicated CAD (Standard), GDS II conversion (Optiional)， DXF conversion（Optional） OS: Windows
CATEGORY
