Technoorg's low-energy Ar ion gun (LEG) is suitable for surface thinning, post-treatment after other surface treatments, cleaning and removing amorphous and oxide surface layers. The low-energy Ar ion source can be particularly useful when integrated into a scanning electron microscope. With an integrated ion source, the samples can be cleaned just before their investigation. Another valuable application for achieving the highest quality samples is the final polishing and gentle surface cleaning of TEM samples after FIB preparation in dual beam SEM/FIB systems. Linear transfer system: In the GIB system, the Ar ion gun is built into a linear transfer system with the bellows. The purpose of mobility is to allow the gun to be retracted when not in use. The movement range of the mechanism is 150 mm, the mounting flange size is 114 OD (DN63), and the diameter of the clear bore through the bellows is 68 mm. Instrument control unit: The electronics, closed-loop cooling system and Ar gas pressure sensor are located in the control unit. High purity (99.999 %) Ar gas is used to supply the Ion source and its flow rate is regulated by a high-precision needle valve. The control software runs under the Windows operating system and it can be installed on a separate or on the SEM’s computer. Integration into a microscope: The transfer system with the bellows can be built into the SEM through a connecting tube. The size of the output flange of this tube matches the size of the corresponding SEM port. The ideal working distance (15-30 mm) can be achieved through the ion source mobility provided by the linear transfer system. Low-energy ion source: The diameter and length of the low-energy ion source are both 50 mm. The energy range of the Ar ion beam: 100 eV-2 kV. The maximum beam current at 2 kV is 70 μA. The beam is a broad beam. The full width at half maximum (FWHM) is 2 mm.
Ion Beam Workstation for Preparing High-Quality FIB/TEM Samples The GentleMill™ system provides precise cleaning and post-processing of FIB-prepared lamellae, delivering artifact-free surfaces with the advanced low-energy ion source technology for high-resolution TEM analysis. Artifact-Free TEM Lamellae Gentle low-energy sample cleaning. Protective Transfer Unit Air-free transfer for sensitive specimens. Automated Multi-Step Milling Processing with minimal user intervention. Sample Handling The dedicated cartridge holder enables safe and efficient handling of the lamellae inside both the FIB/SEM and the GentleMill™ systems. A loading tool secures the lift-out grid in place, protecting delicate specimens throughout preparation and transfer. The design simplifies handling while reducing the risk of accidental sample damage. Protective transfer unit ensures contamination-free transfer of air-sensitive specimens between the ion polisher and a glove box. Supporting both vacuum and inert gas atmospheres, it protects oxygen- and moisture-sensitive samples while providing maximum flexibility for advanced sample preparation workflows. High-Resolution TEM Analysis Al₂O₃ finished at 5 keV Ga⁺ FIB after low-energy cleaning at 0.3 keV Ar⁺ Si–SiGe multilayer after 16 keV Ga⁺ FIB preparation and 300 eV Ar⁺ cleaning Exposed lattice faults in a GaN sample after 200 eV low-energy cleaning Technical Specifications Ion Sources LOW-ENERGY ION SOURCE - Ion beam energy: 0.1-2 keV, continuously adjustable - Ion beam current: up to 70 μA - Ion beam diameter: ~1.2 mm Imaging System - Imaging system for complete visual control and milling supervision with a magnification range of 5 to 100× - High-resolution (5 MP) color CMOS camera and camera lens with fixed focal length (25 mm) Specimen Stage - Oscillation: -30° to +10° in 0.1° steps - Milling angle: ±30° in 0.1° steps Sample Holders - Cartridge for handling FIB lamellae - Optional surface polishing sample holder - Optional double-sided TEM holder for conventional TEM samples Sample Cooling (Optional) - LN₂ cooling - Peltier cooling Vacuum System - Oil-free diaphragm pump: Pfeiffer Model MVP 015-2 - Turbomolecular pump: Pfeiffer HiPace 80 Neo Gas Supply System - Argon gas with 99.999% purity - High-precision control of working gas flow via motorized needle valve Specimen Handling - Vacuum load-lock system for specimen exchange - Dedicated cartridge for easy handling of FIB lift-out grids - Fully mechanical, glueless specimen loading - Optional Protective Transfer Unit for air-free transfer Computer Control - Integrated Windows® PC with touchscreen display - User friendly graphical interface and image analysis - Automatic ion source control, including gas flow regulation by motorized needle valve - Multi-step process programming for automated operation (manual control also available) Power Requirements - Mains voltage: 100-115 V / 208-236 V AC, 1 phase - Maximum input power: 450 VA - Mains frequency: 50/60 Hz
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Automated Ion Beam Thinning System for TEM/XTEM Preparation UniMill™ combines rapid Ar-ion thinning, gentle final polishing and automated endpoint detection for fast, reproducible TEM sample preparation from bulk materials. Optional holders extend its capabilities to FIB lamella cleaning and surface polishing workflows. Dual-Source Design Rapid milling and gentle cleaning Automated Endpoint Control Perforation detection and multi-step recipes Versatile Sample Preparation Bulk TEM, FIB and SEM workflows Flexible Sample Handling and Advanced Cooling UniMill™ offers a versatile selection of sample holders for various preparation workflows, including single-sided and double-sided TEM holders. Optional accessories, such as a cartridge holder for FIB samples and a surface-polishing holder, further expand the system's capabilities. Active sample cooling supports stable preparation of heat-sensitive materials during ion milling. When additional thermal protection is required, UniMill™ can be equipped with liquid nitrogen or Peltier cooling to maintain low sample temperatures throughout the preparation process. TEM Sample Preparation Without Compromise Bulk TEM Si [110] sample finished at 200 eV after perforation Stainless steel sample prepared by Ar⁺ ion surface polishing FIB-prepared diamond lamella after 300 eV final cleaning Technical Specifications Ion Sources HIGH-ENERGY ION SOURCE - Ion beam energy: 2-16 keV - Ion beam current: up to 500 μA - Ion beam diameter: ~0.6 mm LOW-ENERGY ION SOURCE (OPTIONAL) - Ion beam energy: 0.1-2 keV - Ion beam current: up to 70 μA - Ion beam diameter: ~1.2 mm Sample Holders - Single sided clamping TEM holder - Single-sided gluing TEM holder - Double-sided clamping TEM holder - Optional surface polishing SEM holder - Optional cartridge FIB holder Sample Stage - Rotation: 360° - Oscillation: ±180° in 0.1° steps - Milling angle: ±30° in 0.1° steps Sample Cooling (Optional) - LN₂ cooling - Peltier cooling Vacuum System - Oil-free diaphragm pump: Pfeiffer Model MVP 015-2 - Turbomolecular pump: Pfeiffer HiPace 80 Neo Gas Supply System - Argon gas with 99.999% purity - High-precision control of working gas flow via motorized needle valves Imaging System - Imaging system for complete visual control with a total magnification range of up to 860× - High-resolution color CMOS camera and optical zoom lens (0.7-4.5×) - On-screen optical magnification from 7× to 86×, extendable up to 860× via 10× digital zoom Computer Control - Integrated Windows® PC with touchscreen display - User friendly graphical interface and image analysis - Automatic ion source control, including gas flow regulation by motorized needle valve - Multi-step process programming for automated operation (manual control also available) - Image-based monitoring and process termination upon perforation detection Power Requirements - Mains voltage: 100-115 V / 208-236 V AC, 1 phase - Maximum input power: 450 VA - Mains frequency: 50/60 Hz
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High-Precision Ion Milling Platform for SEM and EBSD Workflows SEM PREP SMART™ combines accurate site-specific cross-sectioning, advanced surface polishing and flexible process control in a versatile platform for reliable preparation of challenging materials and complex sample geometries. Broadest Energy Range Flexible ion source options from 0.1-16 kV Micron-Level Targeting ± 1 μm alignment accuracy Wide-area Milling and MultiCut Streamlined recipe-assisted preparation. Surface Polishing and Cross-Sectioning Surface polishing refines mechanically prepared samples, creating smooth, uniform surfaces for advanced SEM, EDS, and EBSD analysis while completely minimizing preparation-induced artifacts. The result is unparalleled microstructural clarity. Precise 90° cross-sectional and 30° slope cutting enable highly accurate investigations and high-quality surface preparation. Wide-area and multi-cut options support efficient, automated analysis of multiple regions within a single custom preparation workflow. Exceptional results for a Wide Range of Applications 90° Cross-section of a PE/PP battery separator membrane, prepared at RT 30° slope-cut of a WC-Co composite, EBSD-ready in a single step Surface polishing of an LED connector, revealing the internal joint structure Technical Specifications Ion Sources HIGH-ENERGY ION SOURCE - Ion beam energy: 2-16 keV, continously adjustable - Ion beam current: up to 500 μA - Ion beam diameter: ~0.6 mm - Maximum milling rate: 500 μm/h LOW-ENERGY ION SOURCE (OPTIONAL) - Ion beam energy: 0.1-2 keV, continuously adjustable - Ion beam current: up to 70 μA - Ion beam diameter: ~1.2 mm Sample Sizes 30° slope cutting and 90° cross-sectioning holders: - 30° holder: max. 35 (l) x 16 (w) x 4.5 (th) mm - 90° holder: max. 18.6 (l) x 16 (w) x 6 (th) mm Surface polishing sample holder: - Flat head type: max. Ø50 mm x 4 mm - Standard type: max. Ø32 mm x 15 mm - Hollow type: max. Ø25 mm x 23 mm Sample Stage - Rotation: 360° - Oscillation: ±180° in 0.1° steps - Milling angle: ±30° in 0.1° steps - Swing: ±2.5 mm Sample Cooling (Optional) - LN₂ cooling - Peltier cooling Vacuum System - Oil-free diaphragm pump: Pfeiffer Model MVP 015-2 - Turbomolecular pump: Pfeiffer HiPace 80 Neo Gas Supply System - Argon gas with 99.999% purity - High-precision control of working gas flow via motorized needle valves Imaging System - Imaging system for complete visual control and milling supervision with a magnification range of 5 to 100× - High-resolution (5 MP) color CMOS camera and camera lens with fixed focal length (25 mm) Computer Control - Integrated Windows® PC with touchscreen display - User friendly graphical interface - Automatic ion source control, including gas flow regulation by motorized needle valve - Multi-step recipe programming for automated process control Power Requirements - Mains voltage: 100-115 V / 208-236 V AC, 1 phase - Maximum input power: 450 VA - Mains frequency: 50/60 Hz
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Polisher for TEM & Metallography - Rugged, corrosion-proof construction - Variable speed control for precision polishing - Quick change bayonet mount bowls - Timer for automatic operation - Extremely light load for fragile TEM and smaller SEM samples Micropol polisher is a compact, versatile, electrically controlled, precise mechanical specimen grinder/polisher designed for planar grinding, dimpling, thinning and polishing of specimens in the fields of nanotechnology, semiconductors and material science. The parameters of polishing (speed, load, time, etc.) can be matched according to the properties of the specimen. High-quality samples are prepared with minimal effort by the operator. APPLICATION While the Micropol MC 3 is well suited for metallographic polishing, it has been specially designed for precision TEM polishing applications. Two types of specimen holders are provided with each unit which makes it ideal for the preparation of both planar and dimpled samples, respectively. OPERATION The arm of Micropol moves the specimen holder or the specimen itself in a semi-random geometric pattern gently pressing it to the bottom of a bowl containing suitable abrasive material. The abrasive material can be grinding paper or suspensions of polishing compound deposited on polishing cloth. SPECIFICATIONS - Power supply: 100 - 240 V AC, 50-60 Hz - Power consumption: max. 85 W - Moving speed of the arm: 30 - 60 scans/min, electronically adjustable - Load: 0 - 5 N, mechanically adjustable - Timing: 1 - 3600 sec, electronically adjustable - Maximum sample size: about 10 - 15 mm in diameter - Moved mass: max. 150 g - Dimensions: 251 x 220 x 181 mm SYSTEM CONFIGURATION - Main unit - Accessories shipped with the equipment: - Flat plastic polishing bowls - 4 pieces - Spherical bowls for dimpling: Cu, Al, plastic lining, empty bowl - 1-1 piece each - Specimen holder for flat bowl - 1 piece - Specimen holder for spherical bowl - 1 piece - Thickness Measuring Kit - Starting Kit of Consumables (abrasive papers, polishing cloth, samples of abrasive diamond pastes and thermoplastic wax)
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