Grat-GO TM: High-quality graphene oxide (GO) solution. Bluestone’s Grat-GO TM products consist of high-quality single-layer graphene oxide (GO) flakes dispersed in aqueous solutions. The solutions are purified and have a pH value between 6 and 7. With a lateral flake dimension as large as 20 µm, Grat-GO TM solutions are ideal for a wide range of applications such as energy storage, transparent conductive coatings, supports for catalysts, composites, and chemical sensors. Features & Benefits of the Grat-GO TM solutions - Well-dispersed - Ease of handling and processing - Batch-to-batch product consistency Technical Specs Product Analysis Concentration 0.1 mg/mL, 1 mg/mL, 5 mg/mL Flake size 1-20 µm Composition GO in DI H2O pH value 6 – 7 Color Brown to Black, depending on the concentration SOLUTION CONCENTRATIONS CAN BE CUSTOMIZED AND/OR TO YOUR IDEAL PRODUCT SPECIFICATIONS.
Graphene film coverage 95% with occasional holes and cracks (< 5 %) Monolayer graphene percentage 95% of cracks or holes larger than 3 mm: 0 Average Raman Id/Ig < 5% within domain Average Hall mobility of 2000-4000 cm 2/Vs at n=1e12 /cm 2 Average sheet resistance of 300-600 ohm/sq. Available Sizes: 1cm x 1cm, 2” or 4” wafer Wafer spec: thermal grown 285-nm SiO2 on p-type Si substrate (resistivity <0.005 ohm-cm)
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Monolayer percentage 95% Optical transmittance at 550 nm 97% (excl. substrate) Average Raman Id/Ig < 5% within domain Average Hall mobility of 2000-4000 cm 2/Vs at n=1e12 /cm 2 Average sheet resistance of 300-600 ohm/sq. Available Sizes (in 2): 2 x 2, 4 x 4, 8 x 10, 12 x 14 Copper thickness 1mil (25 µm)
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Isolated single graphene domain Large graphene domain (30 – 200 µm) Average Raman Id/Ig < 5% within domain Available Sizes: 2” wafer Wafer spec: thermal grown 285-nm SiO2 on p-type Si substrate (resistivity <0.005 ohm-cm)
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