Grat-Power TM: High-quality graphene-enhanced anode materials. BGT is addressing the consumer demands for smaller electronics and sustainable power solutions by revolutionizing electrical energy storage technologies through our graphene-enhanced battery materials known as Grat-Power™. Our advanced battery anode product, Grat-Power TM SiGP, offers drastic performance improvements – 5x the capacity of existing graphitic anodes, and can increase the cell capacity by 20% or more, depending on the cathode materials. SiGP is a composite anode active material combining the high capacity of silicon-based intermetallic alloys with the excellent conductivity and flexibility of layered graphene sheets. Silicon demonstrates theoretical gravimetric and volumetric energy capacities far beyond that of any know material, making it a revolutionary anode additive. The flexible and robust graphene matrix mitigates the performance degradation typically associated with silicon monolithic anodes. BGT’s proprietary process tailors the morphology of the two components to form an integrated nanostructure that optimizes power characteristics. SiGP anode compositions have shown excellent cycling and high-rate characteristics suitable for a wide range of applications, including portable electronics, power tools, and electric vehicles. Features & Benefits of the SiGP anode material - 5 times the gravimetric energy density of graphitic anodes - High-uniformity in particle size and distribution - Extended cycling life - Eco-conscious proprietary manufacturing processes Grat-Power SiGP Overview Technical Specs Product Analysis Composition Silicon and graphene Appearance Dark brown powder 1 st delithiation capacity (0.05C)*1500 mAh/g 1 st cycle efficiency*~ 80% Reversible delithiation capacity (0.2C)*1300 mAh/g Nominal voltage vs. Li/Li+0.4 V Tap density 1.0 g/cc Stable temperature range Up to 450 ºC (*Half-cell test, uncalendered electrode)
Graphene film coverage 95% with occasional holes and cracks (< 5 %) Monolayer graphene percentage 95% of cracks or holes larger than 3 mm: 0 Average Raman Id/Ig < 5% within domain Average Hall mobility of 2000-4000 cm 2/Vs at n=1e12 /cm 2 Average sheet resistance of 300-600 ohm/sq. Available Sizes: 1cm x 1cm, 2” or 4” wafer Wafer spec: thermal grown 285-nm SiO2 on p-type Si substrate (resistivity <0.005 ohm-cm)
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Monolayer percentage 95% Optical transmittance at 550 nm 97% (excl. substrate) Average Raman Id/Ig < 5% within domain Average Hall mobility of 2000-4000 cm 2/Vs at n=1e12 /cm 2 Average sheet resistance of 300-600 ohm/sq. Available Sizes (in 2): 2 x 2, 4 x 4, 8 x 10, 12 x 14 Copper thickness 1mil (25 µm)
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Isolated single graphene domain Large graphene domain (30 – 200 µm) Average Raman Id/Ig < 5% within domain Available Sizes: 2” wafer Wafer spec: thermal grown 285-nm SiO2 on p-type Si substrate (resistivity <0.005 ohm-cm)
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