Atomic Layer Deposition (ALD) is a method of depositing thin films on a substrate surface through a chemical reaction between one or more reactive gases and the substrate. It is an advanced deposition technique that enables the deposition of ultra-thin films with exceptional precision. During ALD process, one or more reactive gases are introduced into a vacuum chamber, where they react with the substrate surface to deposit a thin film via a chemical reaction. This deposition method involves introducing gas phase precursors into the process chamber one by one, in a series of sequential, non-overlapping pulses. By reacting sequentially with the surface of the substrate, each precursor forms a self-limiting layer, and the reaction stops when all the reactive sites are consumed. Through repeated exposure to separate precursors, a thin film is slowly deposited Atomic Layer Deposition the most advanced choice for obtaining compound materials mixing gaseous and liquid precursors Applications - Consumer Electronics - Solar energy - Aerospace and Defence - Healthcare and medical devices - Optics and Photonics - Power Electronics - Research Key features - Vapor source controllers for liquid Precursors with tank/cylinder in a closed cabinet for safe refill - High speed pulsed valves for alternating precursor delivery - Single or multiple furnaces in Hot Wall or Quartz Tube configuration - Reactive gases (SiH 4, NH 3, H 2, CH 4, N 2, etc.) and/ or liquid precursors controlled directly from the software - Optional load lock with pre-heating and/or plasma treatments - Optional Plasma Enhanced configuration - Optional Emission Spectrometer for in-situ plasma diagnostics and End Point Detection Deposited materials Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics
