By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Molecular beam epitaxy of A2B6 compound semiconductors Method for producing heteroepitaxial structures in ultra high vacuum based on atoms or molecules deposition evaporated from heated sources onto heated substrate. Production of high-quality heterostructures based on A2B6 semiconductor materials requires quite "thick" buffer layers to match crystalline grids in combination with a low-temperature growth process. SemiTEq MBE system design provides advanced engineering solutions specially adapted first and foremost to CdHgTe growth. The two-chamber configuration ensures buffer layers based on CdTe and ZnTe materials growth, as well as the cultivation of active CdHgTe layers in individual chambers. That excludes sources cross-contamination, allows to optimize the temperature conditions for each type of layers and increases the process repeatability.
