By INESC Microssistemas e Nanotecnologias
The etching lab offers a range of advanced techniques for precise material removal and surface patterning (up to 200 mm wafers). Dry etching systems include reactive ion etching (RIE) and ion beam etching (IBE), while wet etch processing is also available. Additionally, tools for UV and oxygen plasma surface cleaning are available, including a plasma ashing equipment compatible with 200 mm wafer batches. OUR EQUIPMENT - SPTS Omega ICP (RIE) - LAM Research Rainbow (RIE) - Nordiko 3000 (IBE) - Nordiko 3600 cluster tool (IBE) - Nordiko 7000 (soft sputter etching) - Batch asher PVA Tepla GIGAbatch380M - KOH wet etch SPTS Omega ICP (RIE): This system uses reactive ion etching to etch dielectrics and metals using fluorine and chlorine chemistry. It is designed to process up to 200 mm diameter wafers. The samples processed on the equipment have an uniformity of +/- 2.5 %. The system has 8 gases available: Ar, CF4, SF6, HBr, Cl2, BCl3, O2 and H2. LAM Research Rainbow (RIE): This system uses reactive ion etching to etch dielectrics and metals using fluorine chemistry. It is designed to process up to 150 mm diameter wafers. The system has 7 gases available: CF4, CHF3, SF6, Argon, O2, Helium and Nitrogen.
