By 2d+ Crhea
Atomic force microscopy is used in the laboratory for the micrometric and nanometric scale characterization of semiconductor surfaces (nitrides of III elements (Ga, Al, In), SiC, BN, MoS2, etc.), conductors (NbN, graphene, etc.) and insulators (sapphire, MgO, etc.) studied in the laboratory by measuring the interaction forces between the atoms on the surface and the atoms at the tip of the microscope. The imaging mode mainly used in the laboratory is the intermittent mode (tapping mode TM). The CRHEACAM platform has two atomic force microscopes (AFM) manufactured by Bruker. One is the Nanoscope IV Dimension 3100, which can image samples up to 4 inch in size with a surface scan ranging from 0.25 mm2 to 2500 mm2. The other is the Dimension Edge, equipped with TM mode, which has similar characteristics to the Dimension 3100 and can study samples up to 8 inches in size without cutting. This non-destructive feature is beneficial for characterizing the surface of larger substrates, which are important for the development of a greater number of components. AFM Dimension 3100: Lateral resolution of 5 nm Vertical resolution of 10 pm TM mode characteristics: - Stiffness constant (k) of 42 N/m - Resonance frequency (f0) of 320 kHz AFM Dimension Edge: Lateral resolution of 5 nm Vertical resolution of 10 pm TM mode characteristics: - Stiffness constant (k) of 42 N/m - Resonance frequency (f0) of 320 kHz Peak force ScanAsyst characteristics: - Stiffness constant (k) of 0.4 N/m - Resonance frequency (f0) of 70 kHz
